Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

“…1-3 In addition, TaO x as a RRAM switching material have been found to be of commercial interest due to its superior material property as well as memory performance. [3][4][5][6] To fulfill the increasing demand for low cost and higher density memory, the most obvious way to increase the storage capacity is by decreasing the physical size of the device to a nanoscale dimensions, and in RRAM the scalability down to 10 nm has been demonstrated. 7,8 Other interesting approach is to stack the devices 3-dimensionally, for which two feasible architectures of crossbar and vertical RRAM are reported.…”

Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring

“…4a and b curves 3). At least one work describes the similar forming process named "two-step-forming" allowing to confine the filament diameter due to lower forming impact preventing high current occurrence in the stack [23]. It is worth to note that if the positive polarity is used for forming only irreversible breakdown was observed.…”

Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

“…In other words, the size of filaments can influence the I reset for filament-type RRAM. To lower I reset , the size of the conductive filaments must be scaled down [7,25]. In this study, the filaments inside the TaO x films consisted of oxygen vacancies, which is advantageous for reducing I reset [11].…”