Conductive Oxide Interfaces for Field Effect Devices

Kornblum, Lior

doi:10.1002/admi.201900480

Cited by 32 publications

(26 citation statements)

References 215 publications

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“…Regardless of the mechanism(s) that may give rise to oxide 2DEGs, the phenomena they exhibit hold great potential for device applications. Channels for field effect devices are one possible application area, since the electrons of the 2DEGs are confined between two high‐ k dielectrics. Indeed, in a few short years since their first demonstration, oxide 2DEGs FETs have made considerable progress .…”

Section: Materials and Functional Propertiesmentioning

confidence: 99%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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Functional oxides are an untapped resource for futuristic devices and functionalities. These functionalities can range from high temperature superconductivity to multiferroicity and novel catalytic schemes. The most prominent route for transforming these ideas from a single device in the lab to practical technologies is by integration with semiconductors. Moreover, coupling oxides with semiconductors can herald new and unexpected functionalities that exist in neither of the individual materials. Therefore, oxide epitaxy on semiconductors provides a materials platform for novel device technologies. As oxides and semiconductors exhibit properties that are complementary to one another, epitaxial heterostructures comprised of the two are uniquely poised to deliver rich functionalities. This review discusses recent advancements in the growth of epitaxial oxides on semiconductors, and the electronic and physical structure of their interfaces. Leaning on these fundamentals and practicalities, the material behavior and functionality of semiconductor-oxide heterostructures is discussed, and their potential as device building blocks is highlighted. The culmination of this discussion is a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis. This overview is intended to stimulate ideas for new concepts of functional devices and lay the groundwork for their realization.

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Section: Materials and Functional Propertiesmentioning

confidence: 99%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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“…They introduce exciting physical phenomena such as ferromagnetic‐paramagnetic, metal‐insulator, and ferromagnetic‐antiferromagnetic transitions, as well as intriguing features like colossal magnetoresistance, charge ordering, and orbital ordering . These, in turn, give rise to new applications in photovoltaics, thermoelectrics, two‐dimensional electron gas (2DEG) transistors, magnetic sensors, spin valve devices, memories, and more . It is, therefore, of utmost importance to fundamentally understand the complex nature of coupling between materials′ electronic, magnetic, spin, vibrational, and structural properties, as well as the dependence of the charge transport on temperature, electric and magnetic fields, and lattice defects.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Polaron Transport in Solids from First‐principles

Natanzon

Azulay

Amouyal

2020

Israel Journal of Chemistry

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Polarons are formed in polar or ionic solids, either molecular or crystalline, due to local distortions of the lattice induced by charge carriers. Polaron hopping is the primary mechanism of charge transport in these materials, such as functional ceramic compounds, with applications in photovoltaics, thermoelectrics, two-dimensional electron gas transistors, magnetic sensors, spin valve devices, and memories. Understanding the fundamental physics of polaron hopping is, therefore, of prime technological importance. This article provides a brief physical background of polarons and their hopping mechanism, focusing on first-principles calculations of polaron properties. Herein, we review recent selected studies applying the density functional theory (DFT), and describe the merits and challenges in applying DFT for such calculations, highlighting the need to address both electronic and vibrational aspects. The vibrational component of the polaron is evaluated based on structural and total energy calculations, whereas the electronic component is derived from both total energy and electron density calculations. To address the most compelling challenge of calculating polaron properties using DFT, which is the issue of electron localization, we propose to employ calculations of selected vibrational properties, such as the sound velocity, shear modulus, and Grüneisen parameter, to represent the polaron hopping energy; all of which originate from the stiffness of inter-atomic bonds. Such methodology is expected to be more straightforward than the existing ones, however demands standardization. Keywords: charge transport • polaron hopping • first-principles calculations • oxides • vibrational properties nism dominating the transport correlates to the Debye temperature, θ D. At low temperatures, where T < θ D /2, tunneling predominates, whereas at higher temperatures hopping is more probable. Reports on TMOs are available for many systems, such as CaMnO 3 , [4-10] (

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“…Two different models exist to describe the origin of the 2DEG, whereby only their combination allows a full explanation of all emerging phenomena. While the ionic defect mechanism is able to describe large parts of the observed physical properties [234], according to the polar mechanism a polar discontinuity between nonpolar SrTiO 3 and polar LaAlO 3 planes is the reason for the occurrence of 2DEG [240].…”

Section: Bilayersmentioning

confidence: 99%

Oxidic 2D Materials

Dubnack

Müller

2021

Materials

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The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.

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Conductive Oxide Interfaces for Field Effect Devices

Cited by 32 publications

References 215 publications

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Evaluation of Polaron Transport in Solids from First‐principles

Oxidic 2D Materials

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