Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H–SiC

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

“…As a third-generation semiconductor material, silicon carbide (SiC) is attractive for the applications in many high-tech areas due to its wide forbidden bandgap, high thermal conductivity, and high electrical breakdown strength [1]. For the fabrication of SiC devices, ion implantation is one key process for almost all kinds of SiC devices due to the low diffusion coefficient of impurities (except boron) in silicon carbide [2]. As for p-type doping, the most commonly used dopants are aluminum (Al) and boron (B).…”

Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

“…As a third generation semiconductor material, silicon carbide has many outstanding characteristics such as a wide forbidden bandgap, high thermal conductivity, high mobility, and high electrical breakdown strength [1]. Ion-implantation is generally accepted to be the only feasible method for selective doping in light of the low diffusion coefficient of impurities in silicon carbide [2]. Ion-implantation was followed by a high temperature annealing treatment to achieve the electrical activation of dopant impurities and recovery of defects.…”

“…So far, only a small number of confocal depth analysis results have been published, but most of them have focused on the damage distribution after high energy (MeV range) implantation, which is not the typical case for silicon carbide doping in the SiC electrical device industry. Confocal Raman set-up was used to analyze the depth distribution of damage after high energy ion-implantation on the order of MeV before and after annealing treatment [13] and the information of the absorption coefficient could be extracted from a high dose Al-implanted layer in 6H-SiC [2,14]. Zuk destructively pretreated the sample and obtained the damage distribution of high-energy ion-implanted 6H-SiC by confocal Raman spectroscopy on the processed slope, which requires rigorous and complex sample pretreatment and the sample cannot be re-used or further processed after the test [15].…”