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High energy (MeV) and low dose aluminum implants were performed in p-type 6H-SiC at room temperature. The material was characterized by means of Rutherford backscattering in channeling configuration and confocal micro-Raman scattering. The damage induced changes in the optical absorption coefficient of the implanted layer can be extracted from the depth profiling of the first order Raman intensity of the undamaged portion of the sample, using a confocal microprobe setup. Optical modeling indicates the formation of two layers: an outermost and low absorbing layer with thickness proportional to the energy of the bombarding ions, and a more highly damaged and absorbing layer. Since the damage level is low, the disorder can be essentially removed by annealing at relatively low temperatures.

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