Confocal Raman Microprobe of Lattice Damage in N&lt;sup&gt;+&lt;/sup&gt; Implanted 6H-SiC

Mestres, N.; Alsina, F.; Campos, Francisco José Román; Pascual, J.; Morvan, E.; Godignon, P.; Millán, José del R.

doi:10.4028/www.scientific.net/msf.338-342.663

Cited by 8 publications

(4 citation statements)

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“…3 we give a comparison of experimental data collected for the various series of N and P implants listed in Table 1. Also shown as full triangles are previous experimental results [5]. Notice the good overall agreement obtained using A i = 30 Å 2 for N + -ion and A i = 40 Å 2 for P + -ion.…”

Section: Resultsmentioning

confidence: 61%

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Comparative evaluation of implantation damage produced by N and P ions in 6H‐SiC

Camassel¹,

Blanqué

Mestres

et al. 2003

phys. stat. sol. (c)

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The result of N, P and P + N implantations performed at room temperature in 6H-SiC has been comparatively evaluated. Using micro-Raman spectroscopy we focus on the change in bulk LO-phonon intensity as a function of ions and ion-fluency. We find that the effective damage cross section for phosphorus is about 30% larger than the one for nitrogen. After annealing, good recovery is found but atomic force microscopy still evidences increased surface roughness.Introduction All SiC polytypes display a unique combination of intrinsic material properties like a high thermal conductivity, a high physical stability of the chemical bond and a wide band gap. This makes them attractive to manufacture SiC devices operating at high power and high temperature in chemically aggressive environments. A main drawback is that, to perform selective area doping, ionimplantation is the only accessible technique.In the case of n-type doping, two different species can be used. One (nitrogen) substitutes for C atoms, the second (phosphorus) substitutes for Si. Both have relatively similar ionization energy (≈80 meV) but, according to recent literature data [1] and because of higher electron mobility at high dose, Pimplantation performed at elevated temperature seems to be a better choice. For industrial applications, room temperature implantation conditions are preferred and, in this work, we comparatively evaluate the lattice damage produced by N, P and (N+P) ions implanted at 300 K at doses ranging from 3.54 × 10 14 to 3.92 × 10 15 cm

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Section: Resultsmentioning

confidence: 61%

“…This is nothing but the experimental result of Ref. [5]. We work in the simple overlap model in which every ion which penetrates the sample knocks all atoms sitting within a tube defined by the ion track and an effective cross sectional area A i .…”

Section: Resultsmentioning

confidence: 97%

Comparative evaluation of implantation damage produced by N and P ions in 6H‐SiC

Camassel¹,

Blanqué

Mestres

et al. 2003

phys. stat. sol. (c)

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“…4 shows that all samples in the Raman scattering spectrum have the clearly visible band conditional by transverse optical mode 765,5-797 cm -1 (TO), typical of silicon carbide [3]. Taking into account the fact that the TO-mode intensity strongly depends on the material crystallinity degree [4,5], it is arguable that silicon carbide films received out of DMCS vapors are the most structurally perfect because the optical mode intensity of these samples were maximal.…”

Section: Resultsmentioning

confidence: 99%

Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls

Sinel'nikov¹,

Тарала

Mitchenko³

2009

MSF

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The possibility of silicon carbide films production out of organosilicon chlorine-containing monomers is under analysis in this research. Silicon carbide films samples were produced by chemical deposition method out of gas phase in reactor with “cold walls”, in the conditions of low pressure. The influence of monomer type, substrate temperature on crystalline SiC films composition is also under consideration. The results of infrared spectroscopy, Raman scattering spectrometry and x-ray phase analysis are presented.

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“…2 (bottom) with respect to the virgin material (top) and (ii°) a decrease in the scattered light intensity coming from the bulk optical phonons (narrow lines). Since they originate from the undamaged part of material [6,7], in the first approximation the decrease in Raman intensity is directly proportional to the damage rate D. Let us define D as : (1) in which I 0 and I are the Raman intensities of LO and TO modes in the virgin (non implanted) and implanted part of sample. Probing the four different 1/4 wafers at different spot positions, we get the damage maps shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N<sup>+</sup> and P<sup>+</sup> Ions in 6H-SiC

Blanqué

Pérez²,

Zieliński

et al. 2003

MSF

Self Cite

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We report on the structural and electrical properties of four different 6H-SiC samples implanted to a final concentration of 8x10 19 cm -3 . The implantation was done at room temperature using either N + or P + or (N + + P + ) co-doping. In all three cases, from micro-Raman experiments, we demonstrate a good lattice recovery. From transport experiments, we find about 75% activation of the implanted species and reasonable agreement with previously published data.

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Confocal Raman Microprobe of Lattice Damage in N<sup>+</sup> Implanted 6H-SiC

Cited by 8 publications

References 0 publications

Comparative evaluation of implantation damage produced by N and P ions in 6H‐SiC

Comparative evaluation of implantation damage produced by N and P ions in 6H‐SiC

Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls

Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N<sup>+</sup> and P<sup>+</sup> Ions in 6H-SiC

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