Damage Reduction in Channeled Ion Implanted 6H-SiC

Morvan, E.; Mestres, N.; Campos, Francisco José Román; Pascual, J.; Hallén, Anders; Linnarsson, Margareta K.; Kuznetsov, A. Yu.

doi:10.4028/www.scientific.net/msf.338-342.893

Cited by 14 publications

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“…For practical reasons, implantation into 4H-SiC, a 4°off-axis from the [0001] towards the [11][12][13][14][15][16][17][18][19][20] direction is often employed as a non-channeling direction, taking advantage of the standard miscut of wafers. However, this may not be the best choice to avoid channeling along [000-1] as a critical angle between 3°and 4°is expected at RT for 100 keV vanadium ions [5,20,21].…”

Section: Electronic Stopping and 'Random' Implantation Directionsmentioning

confidence: 99%

“…Channeling is most often an unwanted effect, and, typically, the SiC wafer is oriented in some random, nonchanneling, direction to minimize channeling effects during implantation. For example, as implantation direction in 4H-SiC (hexagonal silicon carbide), a 4°off-axis from the [0001] towards the [11][12][13][14][15][16][17][18][19][20] direction is often used as a 'random' direction, taking advantage of the standard miscut angle of SiC wafers. This results in more or less Gaussian shaped dopant versus depth profiles, where the depth is determined by the energy, the used ions and the target atoms.…”

Section: Introductionmentioning

confidence: 99%

“…Channeling is also altered by the presence of a surface top-layer consisting of adhesive contaminants and natural or intentionally added oxides [16]. To complicate the situation further, the lattice damage caused by the ions is reduced for elevated temperature implants due to dynamic annealing, but the damage may also be reduced for channeling implantations [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

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Intentional and unintentional channeling during implantation of ⁵¹V ions into 4H-SiC

Linnarsson

Hallén

Vines

2019

Semicond. Sci. Technol.

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Ion implantation is a commonly used process step in 4H-SiC device manufacturing to implement precise concentrations of dopant atoms in selected areas and depths. This paper reports on vanadium (V) implantation into 4H-SiC(0001) and how the crystal lattice, with preferential directions, channels, for the ions, will influence the final dopant distribution. Concentration versus depth profiles of V-ions, intentionally and unintentionally channelled, has been recorded by secondary ion mass spectrometry. Ion implantations have been performed between 50 and 300 keV at various impact angles and fluence at room temperature as well as at elevated temperatures. Before ion implantation, the samples were aligned utilizing the blocking pattern of 100 keV backscattered protons. In addition to the aligned implantations, our standard beam line for ion implantation has been used for implantations in a ‘random’ direction using the wafer miscut angle of 4°. The electronic stopping has been determined from these ‘random’ cases and the values have been used in 3D simulations to predict preferential crystallographic directions using SIIMPL, a Monte Carlo simulation code based on the binary collision approximation. The results show that, independent of the used impact angle there is always a probability that the vanadium ions will be steered into the [000-1] and the family of 〈11-2-3〉 crystal directions and therefore penetrate deep into the sample, resulting in unwanted ‘spikes’. If the implantation is performed at elevated temperatures, a larger degree of dechanneling is present due to increased thermal vibrations and the penetration depth of vanadium is slightly reduced.

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Section: Electronic Stopping and 'Random' Implantation Directionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Intentional and unintentional channeling during implantation of ⁵¹V ions into 4H-SiC

Linnarsson

Hallén

Vines

2019

Semicond. Sci. Technol.

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“…The repetition can be minimized through smaller lateral straggling of ion implantation along the crystal channel (socalled channeled-ion implantation (CII) 21) ). Although CII (into 6H-SiC using 1.5-MeV Al ions 22) or into 4H-SiC using 60 keV Al ions 23) ) along the 〈0001〉 direction has been carried out after performing angular scans using Rutherford backscattering (RBS), CII using a parallel-scanning system (PSS) (whose beam parallelism was less than ±0.5°) 24) is considered to be suited for fabrication of cost-effective SJ devices. In the PSS, an ion beam is swept in a horizontal direction and the wafer is scanned in a vertical direction (Fig.…”

Section: Before Correctionmentioning

confidence: 99%

“…Future studies include four-degree-tilt CII of 27 Al into a   4.0 0.2 -off (0001) substrate whose OF is parallel to the [ 1120] direction ±1.0°, as well as post-implantation annealing followed by evaluation of the residual damage, which had been demonstrated to be reduced in the case of RBS and CII of 27 Al into 3.5°-off 6H-SiC (0001). 38)…”

Section: Before Correctionmentioning

confidence: 99%

Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices

Mochizuki

Kosugi

Yonezawa

et al. 2019

Jpn. J. Appl. Phys.

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Recently, we found a mistake in the depth profile of channeled-ion implantation into 4H-SiC (0001), where 114-keV 27 Al ions were implanted at a dose of 1.3 × 10 13 cm −2 . However, the discussion of the manuscript is unchanged. We would like to apologize for any inconvenience.The sentence and figures related to the depth profile of channeled-ion implantation into 4H-SiC ( 0001), where 114-keV 27 Al ions were implanted at a dose of 1.3 × 10 13 cm −2 , written on page 050905-3 should be corrected as shown below: line 14-16: Before correction: "As shown in Fig. 6, R max is 0.29 μm for N, 0.32 μm for B, 0.67 μm for P, and 1.06 μm for Al".After correction: "As shown in Fig. 6, R max is 0.29 μm for N, 0.32 μm for B, 0.67 μm for P, and 0.99 μm for Al". 31 P ions were implanted at a dose of 1.3 × 10 13 cm −2 . Maximum channeled range (R max ) is defined as the depth where concentration decreases to 10% of its channeled peak concentration. 21)

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The quantitative damage and impurity depth profiling of the MgO single crystal

Gloginjić,

Erich,

Starčević

et al. 2024

Vacuum

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Damage Reduction in Channeled Ion Implanted 6H-SiC

Cited by 14 publications

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Intentional and unintentional channeling during implantation of ⁵¹V ions into 4H-SiC

Intentional and unintentional channeling during implantation of ⁵¹V ions into 4H-SiC

Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices

The quantitative damage and impurity depth profiling of the MgO single crystal

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Damage Reduction in Channeled Ion Implanted 6H-SiC

Cited by 14 publications

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Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC

Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC

Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices

The quantitative damage and impurity depth profiling of the MgO single crystal

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Intentional and unintentional channeling during implantation of ⁵¹V ions into 4H-SiC

Intentional and unintentional channeling during implantation of ⁵¹V ions into 4H-SiC