Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiSx-NbSx Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabrication

Basuvalingam, Saravana Balaji; Verheijen, Marcel A.; Kessels, W.M.M.; Bol, Ageeth A.

doi:10.1021/acsanm.0c02820

Cited by 11 publications

(16 citation statements)

References 37 publications

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“…A thermal TiS x recipe was also used for comparison. 80 Film Characterization. Film thickness was monitored during depositions using in situ spectroscopic ellipsometry (SE).…”

Section: Chemistry Of Materials Pubsacsorg/cm Articlementioning

confidence: 99%

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

et al. 2022

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Two-dimensional transition metal dichalcogenides, such as MoS 2 , are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS 2 , TiS 2 , and WS 2 films of controlled thickness at record-low temperatures down to 100 °C using plasma-enhanced atomic layer deposition. We show that preventing excess sulfur incorporation from H 2 S-based plasma is the key to deposition of crystalline films, which can be achieved by adding H 2 to the plasma feed gas. Film composition, crystallinity, growth, morphology, and electrical properties of MoS x films prepared within a broad range of deposition conditions have been systematically characterized. Film characteristics are correlated with results of field-effect transistors based on MoS 2 films deposited at 100 °C. The capability to deposit MoS 2 on poly(ethylene terephthalate) substrates showcases the potential of our process for flexible devices. Furthermore, the composition control achieved by tailoring plasma chemistry is relevant for all low-temperature plasma-enhanced deposition processes of metal chalcogenides.

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“…A thermal TiS x recipe was also used for comparison. 80 Film Characterization. Film thickness was monitored during depositions using in situ spectroscopic ellipsometry (SE).…”

Section: Chemistry Of Materials Pubsacsorg/cm Articlementioning

confidence: 99%

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

et al. 2022

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“…The research demonstrated a large area uniformity and conformality of the ALD heterostructures implying applications in nanoelectronics with 3D structures and high aspect ratios. 148 A low-temperature ALD of MoS 2 thin film was investigated by Jurca et al 149 This research was triggered by the high reactivity of Mo(NMe 2 ) 4 as revealed by wet chemical screening. The growth of amorphous MoS 2 film was possible at as low as 60 °C with a growth rate of 1.2 Å/cycle.…”

Section: Metalmentioning

confidence: 99%

Advances in Atomic Layer Deposition of Metal Sulfides: From a Precursors Perspective

2022

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Development at the nanoscale has established diverse and complex structures with the help of a growing selection of materials to choose from. Among the major developments that has led to these creations is the atomic layer deposition (ALD) technique that allows precise linear stepwise synthesis of various nanomaterials, which is the defining feature of ALD. Recent research activities have recorded an upsurge in the synthesis and applications of metal sulfides created via this technique. This rise in research on ALD of metal sulfides has established varying methods to deposit each metal sulfide, which necessitates a review that can analyze the major and minor advancements that have been made in the field. Hence, this comprehensive review encompasses the various ALD techniques with which metal sulfides have been synthesized, followed by a thorough account of reported chemistry and parameters by which various kinds of metal and sulfide precursors react, and finally the existing, emerging, and potential applications that incorporate metal sulfide ALD.

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“…[114,145,152,213] In addition to the conventional thermal evaporation, electron beam deposition or magnetron sputtering, [125,[214][215][216][217] ALD affords atomic film thickness precision control of the deposited film, benefiting the following reaction with chalcogens. [117,[218][219][220] Tan et al used ALD to deposit MoCl 5 film and sulfurize it with H 2 S to generate 5.08 cm (2 in.) continuous film.…”

Section: Layer Numbermentioning

confidence: 99%

“…[114,145,152,213] In addition to the conventional thermal evaporation, electron beam deposition or magnetron sputtering, [125,[214][215][216][217] atomic layer deposition (ALD) affords atomic film thickness precision control of the deposited film, benefiting the following reaction with chalcogens. [117,[218][219][220] it with H 2 S to generate 5.08 cm (2-inch) continuous film. [140] ALD provides a route to tune the layer number of the product through deposition cycles (Figure 12c).…”

Section: Layer Numbermentioning

confidence: 99%

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

Wang

Yang

2021

Adv Elect Materials

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When the timeline reached 2004, graphene, the single layer of graphite, was discovered through a scotch-tape exfoliation method and was found to have ultrahigh mobility. [25][26][27] Various 2D materials such as transition metal chalcogenides (TMCs), [28][29][30] boron nitrides (BNs), [31,32] black phosphorus, [33,34] and some new materials including Si, [35] Te, [36] and black arsenic-phosphorus [37] were subsequently synthesized, enabling the fabrication of numerous novel devices. The field of 2D materials is now making strong voice, which is no longer ignored by the scientific and technological community. [38][39][40] Among the various 2D materials, the TMCs constituted by the transition metal elements (M) and the chalcogen elements (X) are a large family. M can range from group 4B to group 10 in the periodic table, while X is S, Se, or Te. [41][42][43][44][45][46][47] Figure 1a exhibits the binary TMCs that have already been explored. This variation of composition of elements transfers to a wide range of properties ranging from insulators (e.g., HfS 2 ), [48,49] semiconductors (e.g., MoS 2 , WS 2 ), [50,51] semimetals (e.g., MoTe 2 , TiSe 2 ), [52,53] to metals (e.g., NbSe 2 , VS 2 ). [54][55][56] Furthermore, TMCs can form alloys in the formula such as WSe 2−x S x , with composition-tunable properties. [57][58][59] Unlike semimetallic graphene, semiconducting TMCs usually possess a bandgap. For example, MoS 2 exhibits a bandgap, transitioning from indirect bandgap to direct bandgap when it thins from bulk phase to monolayer (Figure 1b), boosting the photoluminescence (PL) efficiency. [51,[60][61][62] Additionally, inversion symmetry breaking and large spin-orbit interaction, resulting in two energetic degenerate but inequivalent valleys in the band structure of a TMC (Figure 1c), may lead to breakthroughs in valleytronics and spintronics. [63][64][65][66][67][68][69][70] A few TMCs (e.g., NbSe 2 , TaS 2 , VSe 2 ) have shown superconductivity, [71,72] charge density wave [73,74] and Mott transition (transition from metal to nonmetal). [75,76] In addition, some novel TMCs such as Fe 3 GeTe 2 display intrinsic magnetism with gate-tunable Curie points. [66,77] Semimetallic TMCs like WTe 2 show topological structures in the energy band, enabling the study on topological physics. [78,79] The rich intrinsic properties and superior tunability of TMCs hold great promise for all kinds of technologically important applications in electronics, optoelectronics, spintronics, valleytronics, etc. (Figure 1d). [51,[80][81][82][83][84][85][86][87][88][89][90][91] Due to numerous unique properties of 2D TMCs, devices such as transistors, photodetectors (PDs), and photodiodes based on 2D TMCs have been actively pursued. The ultimate destination of the miniaturization of the electronic devices will 2D transition metal chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number, composition, and inter...

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Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiS_x-NbS_x Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabrication

Cited by 11 publications

References 37 publications

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Advances in Atomic Layer Deposition of Metal Sulfides: From a Precursors Perspective

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

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