Sensors and Electron Devices Directorate, ARLApproved for public release; distribution is unlimited.ii REPORT DOCUMENTATION PAGE Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS.
REPORT DATE (DD-MM-YYYY)September 2008
PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)
U.S. Army Research Laboratory Sensors and Electron Devices Directorate IR Materials Branch (ATTN: AMSRD-ARL-SE-EI) Adelphi, MD 20783-1197
PERFORMING ORGANIZATION REPORT NUMBER
ARL-TR-4545
SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)
SPONSOR/MONITOR'S REPORT NUMBER(S)
DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited.
SUPPLEMENTARY NOTES
ABSTRACTWe report the results of a study of the temperature-dependent photoluminescence (PL) and leakage current characteristics of a set of type II indium arsenide (InAs)-gallium antimonide (GaSb) superlattice (SL) photodiode structures. We find that the PL efficiency of high-quality structures is determined by Shockley-Read and trap-assisted tunneling nonradiative recombination processes. Our results suggest a possible correlation between trap-assisted tunneling in some SL structures and an anomalous decrease in the PL efficiency with increasing temperature over the range 40-78 K, and provide insight into the effect of defects and SL homogeneity on the PL and transport characteristics of the photodiodes.