Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

“…3) or more demanding AR of about 40:1. 11,12 With macroscopic lateral high-aspect-ratio (LHAR) test structures, 13,14 accurate thickness profiles along the gap have been recorded with AR up to 200:1. Because of the macroscopic dimensions (gap size on the order of 100 lm), molecular flow inside these LHAR structures is reached only in high vacuum (e.g., 10 À4 Torr).…”

Structural and electrical characteristics of Al-doped TiO<inf>2</inf> high-k gate dielectric grown by atomic layer deposition

“…High purity Ar (99.99%) gas was used as the carrier and purging gas during each ALD deposition cycle. The optimal process temperature for TiO 2 The thickness of as-grown thin film was determined by SE (Sopra GES-5E system) in the spectra range of 1.5-6.5 eV. The incident angle was 75 o .…”

“…The rapid development of CMOS technology has been pushing for researches into novel high dielectric constant (high-k) insulators due to the physical limitations of SiO 2 , such as large leakage current and high interface trap [1][2][3]. Many researchers have investigated into the various candidates of high-k materials, such as Al 2 O 3 , HfO 2 , ZrO 2 , La 2 O 3 , and TiO 2 .…”

Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications

“…For instance, TiCl 4 and Ti(OEt) 4 have both allowed conformal ALD over three-dimensional substrates potentially suited to silicon-based nanoelectronics, for example, high aspect ratio trench structures. [20] Ti(O i Pr) 4 has also been applied. [21] In the ALD of TiO 2 from these precursors, rather short pulse-purge times, comparable to those used for the planar wafers, may be used with high aspect ratio structures without essential loss in step coverage.…”