Connected box-units-based compact highly clean environment for cross-disciplinary experiments platform

Ishibashi, Akira; Kaiju, Hideo; Yamagata, Yuuki; Kawaguchi, Nobuyoshi

doi:10.1049/el:20051053

Cited by 14 publications

(15 citation statements)

References 4 publications

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“…Drawbacks of those concentration systems, however, are that the apparatus to follow the Sun is expensive, and that, if the concentration is performed with lens, the system cannot be effective for diffusive light of cloudy and/or rainy days. Speaking of a yield in producing those new solar cell systems, versatile clean systems [10,11] are to play an essential role.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric Waveguide-Coupled Scheme for Multi-striped Orthogonal Photon-Photocarrier-Propagation Solar Cell (MOP<sup>3</sup>SC)

Ishibashi

Sawamura

Matsuoka

et al. 2019

Trans. Mat. Res. Soc. Japan

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Investigated are asymmetric redirection waveguides that are to couple to a solar-cell unit placed at the end, converting 3D-photons of sunlight to 2D-photons. The redirection waveguide is equipped with two functions, the first of which is to make the 3D-photons coming from various directions go vertically with respect to a 2D-waveguide. The second function is to change the vertically going photons into lateral photons propagating in the 2D waveguide. The redirection waveguide can harvest photons coming in wide area and convey them to the solar-cell unit located at the periphery of the 2D waveguide, as a key element of concentrator solar-cell with high conversion efficiencies as well as of optical wireless power transmission systems.

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Section: Introductionmentioning

confidence: 99%

Asymmetric Waveguide-Coupled Scheme for Multi-striped Orthogonal Photon-Photocarrier-Propagation Solar Cell (MOP<sup>3</sup>SC)

Ishibashi

Sawamura

Matsuoka

et al. 2019

Trans. Mat. Res. Soc. Japan

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“…Integration of a bottom-up system with a top-down one through the fusion of tool-based and device-based approaches has already been proposed which is an important issue in the field of nanotechnology 9 . A clean-unit system platform (CUSP), made of multiply connectable airtight clean box unit with 100% air feedback through a feedback loop, is the tool-based approach 10 . Cleanliness of ISO class 1∼2 has already been demonstrated in airtight acrylic based CUSP with single high efficiency particulate air (HEPA) filter 11 .…”

Section: Introductionmentioning

confidence: 99%

Ultra-high Cleanliness of ISO Class Minus 2 Realized by Clean-Unit System Platform for Integrating the Bottom-up and Top-down Systems

Rahaman

Kaiju

Ishibashi

2013

Dhaka Univ. J. Sci.

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The time dependence of the airborne particle count and the cleanliness of an airtight stainless steel clean-unit system platform (S-CUSP) with 100% air feedback through the feedback loop by installing the ultra low penetration air (ULPA) filter just beneath the high efficiency particulate air (HEPA) filter in the feedback loop has been studied. By controlling the number of particles coming out from the HEPA filter, the ultra high cleanliness of ISO class minus 2 has been obtained, which is five orders of magnitude better than that of the super cleanroom (ISO Class 3). Analyses of the experimental results demonstrate that the S-CUSP with flat feedback loop would be a viable economical means to achieve the more stringent cleanliness class, which has the immense importance for expediting the multi-disciplinary experiments and production fields such as nanotechnologies and biotechnologies. DOI: http://dx.doi.org/10.3329/dujs.v61i2.17063 Dhaka Univ. J. Sci. 61(2): 157-160, 2013 (July)

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“…Then, two thin slices of the metal/insulator nano-baumkuchen are cut out from the metal/insulator spiral heterostructure. Finally, the two thin slices are attached together face to face so that each stripe crosses in a highly clean environment (Ishibashi et al, 2005;Kaiju et al, 2005;Rahaman et al, 2008). Utilizing this DNB structure, we can expect to realize high density memory devices, the crossing point of which can be scaled down to ultimate feature sizes of a few nanometers thanks to their atomic-scale resolution of the film thickness determined by the rate of metal deposition, ranging from 0.01 to 1 nm/s.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Nanofabrication Techniques and Applications

Cui¹

2011

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Recent Advances in Nanofabrication Techniques and ApplicationsRecent Advances in Nanofabrication Techniques and Applications Electron Beam Lithography for Fine Dot Arrays with Nanometer-Sized Dot and Pitch 9 EB-drawing system [7]I have already reported key technologies which enable ultrahigh packing over 1 Tb/in 2 : (1) the use of an EB drawing system with a fine probe and large probe current, (2) the thinning of the resist to prevent the spread of incident electron scattering in the resist, and (3) the design of a highly packed pattern with a hexagonal or centered rectangular lattice structure to avoid the proximity effect (Fig. 3. 1). The EB drawing system consists of a HR-SEM (JSM6500F, JEOL, Ltd.) and a writing controller (Tokyo Technology Co., Ltd.) (Fig. 3. 2). The drawing was done on a resist coating on a piece of Si placed on the XY table, which was not moved during the EB writing. This type system is very suitable for checking the limit of the drawing pattern size, because the stage position error can be neglected. The system provides a high probe current of 2 nA at a resolution of 2 nm. We used the system under a probe current of 100 pA and an acceleration voltage of 30 kV. In the drawing, the address resolutions were 10 nm and 2.5 nm for ZEP520 and calixarene [14, 15] resists, respectively. Development was carried out using the commercial developers ZED-N50 (MIBK+IPA) and ZEP-RD (xylene) for 210 sec and 180 sec for ZEP520 and calixarene, respectively. In particular, we adjusted the focus to get the fine probe on the sample surface at a magnification of 250k-200k. In order to achieve 1-Tb/in 2 storage patterned media, we carried out experiments to confirm whether EB writing can form very fine pit or dot arrays with a pitch of <60 nm or not. At first, we coated the resist on a piece of Si substrate with a thickness of 70 nm and 15 nm in ZEP520 and calixarene, respectively. After pre-baking, we drew ultrahigh-packed pit and dot patterns with a pitch of 20-60 nm. After developing and rinsing the resists, we checked the drawn patterns using the same HR-SEM. Thinning allows not only to prevent electron scattering extension in the resist, but also to avoid electron charging. We determined the minimum thickness at which there is sufficient contrast and no damage to the resist during SEM observation. The thickness of 70 nm in ZEP520 resist was decided by electron damage and contrast signal in SEM. I could not obtain the high magnitude SEM image in a thickness range of less than 70 nm.Recent Advances in Nanofabrication Techniques and Applications 10 3.2 EB drawing [7, 13] 3.2.1 Using ZEP520 positive EB resist Figure 3.3 shows SEM images of ZEP520 pit patterns drawn at an exposure dosage of around 180 C/cm 2 . The figure shows that the minimum pit arrays were drawn with a minimum pit diameter of <20 nm at a pitch of 40 nm x 60 nm [13]. We could not form higherpacked pit patterns than this. Furthermore, the pit size drastically changed, with a fluctuation of about 18 nm in this pitch arrays pattern and about 11 ...

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Connected box-units-based compact highly clean environment for cross-disciplinary experiments platform

Cited by 14 publications

References 4 publications

Asymmetric Waveguide-Coupled Scheme for Multi-striped Orthogonal Photon-Photocarrier-Propagation Solar Cell (MOP<sup>3</sup>SC)

Asymmetric Waveguide-Coupled Scheme for Multi-striped Orthogonal Photon-Photocarrier-Propagation Solar Cell (MOP<sup>3</sup>SC)

Ultra-high Cleanliness of ISO Class Minus 2 Realized by Clean-Unit System Platform for Integrating the Bottom-up and Top-down Systems

Recent Advances in Nanofabrication Techniques and Applications

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