Consequences of Surface Neutralization in Diblock Copolymer Thin Films

Kim, Sangwon; Bates, Christopher M.; Thio, Anthony; Cushen, Julia D.; Ellison, Christopher J.; Willson, C. Grant; Bates, Frank S.

doi:10.1021/nn403616r

Cited by 59 publications

(104 citation statements)

References 79 publications

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“…14,27 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 5 A shallow trench between the mat and backfilling brush also assists in guiding the BCP domains, thus combining graphoepitaxy with chemical epitaxy without the concomitant loss of usable area common to graphoepitaxy techniques. The effectiveness of this sidewall double patterning DSA was exemplified by carrying out the first demonstration of pattern transfer into a Si substrate using a poly(trimethylsilylstyrene-block-p-methoxystyrene) (PTMSS-b-PMOST) block copolymer with a full pitch under 20 nm.…”

Section: Introductionmentioning

confidence: 99%

Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST

Cushen

Wan

Blachut

et al. 2015

ACS Appl. Mater. Interfaces

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The directed self-assembly (DSA) of two sub-20 nm pitch silicon-containing block copolymers (BCPs) was accomplished using a double-patterned sidewall scheme in which each lithographic prepatterned feature produced two regions for pattern registration. In doing so, the critical dimension of the lithographic prepatterns was relaxed by a factor of 2 compared to previously reported schemes for DSA. The key to enabling the double-patterned sidewall scheme is the exploitation of the oxidized sidewalls of cross-linked polystyrene formed during the pattern transfer of the resist via reactive ion etching. This results in shallow trenches with two guiding interfaces per prepatterned feature. Electron loss spectroscopy was used to study and confirm the guiding mechanism of the double-patterned sidewalls, and pattern transfer of the BCPs into a silicon substrate was achieved using reactive ion etching. The line edge roughness, width roughness, and placement error are near the target required for bit-patterned media applications, and the technique is also compatible with the needs of the semiconductor industry for high-volume manufacturing.

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Section: Introductionmentioning

confidence: 99%

Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST

Cushen

Wan

Blachut

et al. 2015

ACS Appl. Mater. Interfaces

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“…In particular, at commensurate film thicknesses the presence of parallel microdomains is much more prominent because there is no additional gain in total surface energy via the formation of holes/islands which increases the surface area of the exposed block . Notably, both n L 0 and ( n + 0.5)L 0 ( n = 0, 1, 2, 3…) are commensurate thicknesses when at least one interface is equally wetted by both blocks . A similar oscillatory behavior in orientation can also be seen in nanoparticle‐treated substrates …”

Section: Substrate Neutralizationmentioning

confidence: 64%

Thermal Approaches to Perpendicular Block Copolymer Microdomains in Thin Films: A Review and Appraisal

Wang

Kim

Bang

2018

Macromol. Rapid Commun.

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Block copolymer thin films are highly versatile and accessible materials capable of producing nanofeatures in the size regime of a few to hundreds of nanometers by a simple spin‐coating‐and‐anneal process. Unfortunately, this simple protocol usually leads to parallel microdomains, which limits the applicability of such nanofeatures. A great deal of effort has been put into achieving perpendicular microdomains, but those that incorporate thermal annealing are arguably the most practical and reproducible in the lab and industry. This review discusses the recent ongoing efforts on various thermal approaches to achieving perpendicular microdomains in order to provide the readers with a toolbox to work with.

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“…Neutral surface screening. Neutral top and bottom interfaces were found using previously reported materials and methodology 1,3 . Figure S7.…”

Section: Removal Of Raft End Groupsmentioning

confidence: 99%

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Maher¹,

Mori²,

Sirard

et al. 2016

ACS Macro Lett.

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Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition−fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO 2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries.

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Consequences of Surface Neutralization in Diblock Copolymer Thin Films

Cited by 59 publications

References 79 publications

Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST

Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST

Thermal Approaches to Perpendicular Block Copolymer Microdomains in Thin Films: A Review and Appraisal

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

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