Consideration to minimize power losses in synchronous rectification

Choi, Wonsuk; Young, Sungmo; Son, Dongkook; Shin, Seunghwan; Hyun, Dong-Seok

doi:10.1109/icpe.2011.5944789

Cited by 17 publications

(6 citation statements)

References 4 publications

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“…6 (a) and (b). The total volume of the main circuit of the proposed 5MHz DC-DC converter is 16.14cm 3 , where depth and width are 3.00cm and 6.81cm, and highest point is 0.79cm. The reason of the selected switches and magnetic transformer materials are described in [1].…”

Section: Resultsmentioning

confidence: 99%

“…In this converter, GaN-FETs were utilized as semiconductor switches, which were suitable for high-frequency switching operation. Also, another researches have been proved utilizing GaN-FET for high frequency converter is very practical [2][3][4][5]. Current-mode resonant DC-DC converters are usually controlled by pulse frequency modulation (PFM).…”

Section: Introductionmentioning

confidence: 99%

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High frequency PWM-controlled current-mode resonant DC-DC converter with boost conversion

Hariya

Matsuura

Yanagi

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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In this paper, a new pulse width modulation (PWM) control method for the isolated current-mode resonant converter with a fixed switching frequency is presented. The circuit topology is the same as a conventional resonant converter with synchronous rectification and without any additional components. The control technique for the output voltage regulation is proposed with the unique PWM control for synchronously-rectifying switches. By using the transformer's leakage inductance and the PWM control, the boost conversion can be realized. Also, the zero-voltage switching (ZVS) operation can be done for primary switches, simultaneously. Some experiments have been done with 5MHz isolated DC-DC converter which has Gallium Nitride field effect transistor (GaN-FET).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High frequency PWM-controlled current-mode resonant DC-DC converter with boost conversion

Hariya

Matsuura

Yanagi

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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“…The observed voltage overshoots in the current‐source transistors generated during the reverse recovery process of the body diodes result in remarkable voltages across the devices but cause no second order effects, such as an avalanche or a dynamic turn on. These overshoots could be reduced by PCB layout optimisation or application of small RC or RCD snubbers across the power semiconductor switches, minimisation of conduction time of the MOSFET body diode and further circuit and layout improvements [45]. Such voltage spikes caused by the reverse recovery process are typical and frequently observed in soft‐switching CF converters presented recently [32, 46, 47].…”

Section: Experimental Verification and Analysismentioning

confidence: 99%

Bidirectional soft‐switching dc–dc converter for battery energy storage systems

Blinov¹,

Kosenko²,

Chub³

et al. 2018

IET Power Electronics

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The study introduces a bidirectional dc-dc converter with current-and voltage-fed (VF) ports that features soft switching in both buck and boost operating modes. The converter can be used for integration of low-voltage DC sources, such as batteries into a dc bus of considerably higher voltage or a dc link of a grid side inverter. Zero current switching, assisted with the leakage inductance of the isolation transformer, can be achieved at the current-fed side along with zero voltage switching of the VF side, assisted by snubber or intrinsic capacitances of the transistors. Soft switching can be maintained over a wide range of voltage and power levels, regardless of the energy transfer direction. Converter operation is described and theoretical findings were verified with experimental results obtained by means of a 300 W prototype operating at a switching frequency of 100 kHz and designed for integration of a 24 V battery into 400 V dc bus. The converter proposed is compared in terms of efficiency to other competing soft-switching full-bridge topologies implemented with the same components.

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“…As a result of an application-oriented strategy, High-Voltage (HV) SuperJunction MOSFETs (SJ-FETs) are optimized to reduce the Reverse Recovery (RR) when addressing specific circuit topologies (e.g. converters with synchronous rectification [1]- [2]), in order to mitigate its effect on switching losses [3]. The RR optimization normally implies reduction of RR charge (Qrr), RR peak current (Irrm) and RR time (trr), as well as softening waveform snappiness.…”

Section: Introductionmentioning

confidence: 99%

Reducing Qrr in high-voltage SuperJunction MOSFETs by using the cascode configuration

Rodríguez

Lamar

et al. 2017

2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

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In this paper, the reverse conduction behavior of a Cascode Configuration (CC), combining a High-Voltage (HV) SuperJunction MOSFET (SJ-FET) and a Low-Voltage silicon MOSFET (LV-FET) is deeply scrutinized by means of an analytical model and experimental data. The reverse recovery charge (Qrr) of SJ-FETs in CC with LV-FETs (SJ-CCs) is investigated in this work. As a result of the study, it has been found that the proposed SJ-CC avoids or mitigates the conduction of the SJ-FET body diode during reverse conduction. As consequence, the Qrr achieved by the CC is several times lower than in the case of the standalone configuration. Moreover, the Qrr reduction achieved results in record-low Qrr for 600 V-range silicon transistors at a fixed on-resistance (RDSON).

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Consideration to minimize power losses in synchronous rectification

Cited by 17 publications

References 4 publications

High frequency PWM-controlled current-mode resonant DC-DC converter with boost conversion

High frequency PWM-controlled current-mode resonant DC-DC converter with boost conversion

Bidirectional soft‐switching dc–dc converter for battery energy storage systems

Reducing Qrr in high-voltage SuperJunction MOSFETs by using the cascode configuration

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