Considerations in Further Development of Aluminum Nitride as a Material for Device Applications

Stacy, T.; Liaw, Been‐Yang; Khan, A. H.

doi:10.1007/978-94-011-0173-8_49

Wide Band Gap Electronic Materials 1995

DOI: 10.1007/978-94-011-0173-8_49

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Considerations in Further Development of Aluminum Nitride as a Material for Device Applications

T. Stacy

Been‐Yang Liaw

A. H. Khan

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Cited by 3 publications

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X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001)

Edgar

Smith

et al. 1997

Journal of Elec Materi

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The structure and crystal quality of epitaxial films of SiC/AlN/6H-SiC(0001) prepared by chemical vapor deposition were evaluated by high resolution transmission electron microscopy (HRTEM) and x-ray diffraction techniques. Cross-sectional HRTEM revealed an abrupt AlN layer-6H-SiC substrate junction, but the transition between the AlN and SiC layers was much rougher, leading to the formation of a highly disordered SiC region adjacent to the interface. The AlN layer was relatively defect free, while the SiC layer contained many microtwins and stacking faults originating at the top SiC/AlN interface. The SiC layer was the 3C-polytype, as determined by double crystal x-ray rocking curves. The SiC layers were under in-plane compressive stress, with calculated defect density between 2-4 × 10 7 defects/cm -2 .

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X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001)

Edgar

Smith

et al. 1997

Journal of Elec Materi

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AlN thin films deposition by laser ablation of Al target in nitrogen reactive atmosphere

Verardi

Dinescu

Gerardi³

et al. 1997

Applied Surface Science

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TOF study of pulsed-laser ablation of aluminum nitride for thin film growth

Chu

Ong

Chen

et al. 1999

Applied Surface Science

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Considerations in Further Development of Aluminum Nitride as a Material for Device Applications

Cited by 3 publications

References 45 publications

X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001)

X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001)

AlN thin films deposition by laser ablation of Al target in nitrogen reactive atmosphere

TOF study of pulsed-laser ablation of aluminum nitride for thin film growth

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