Articles you may be interested inTemperature dependence on current-voltage characteristics of nickel/diamond Schottky diodes on high quality boron-doped homoepitaxial diamond film Silver on diamond Schottky diodes formed on boron doped hotfilament chemical vapor deposited polycrystalline diamond films Schottky diodes utilized for mechanical stress effect studies were fabricated using aluminum contacts to polycrystalline diamond thin films grown by a hot-filament-assisted chemical vapor deposition process. Compressive stress was found to have a large effect on the forward biased current-voltage characteristics of the diode, whereas the effect on the reverse biased characteristics was relatively small. This stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects that dominated the diode current-voltage characteristics in the small and large bias regions, respectively. At a large constant forward bias current, a good linear relationship between output voltage and applied force was observed for force of less than 10 N, as predicted by the piezoresistance effect. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. Compared to either silicon or germanium junction diodes and tunnel diodes, polycrystalline diamond Schottky diodes not only are very stress sensitive but also have good linearity. This study shows polycrystalline diamond Schottky diodes have potential as mechanical sensors.
Schottky diodes were fabricated using sputter deposited silver contacts to boron doped polycrystalline diamond thin films grown by a hot-filament chemical vapor deposition process with trimethyl borate as an in situ dopant source. High forward current density and a high forward-to-reverse current ratio were exhibited by these diodes. Current density-voltage and capacitance-voltage-frequency characteristics of these diodes are very similar to those of Schottky diodes fabricated using a single-crystal diamond substrate.
Etching of hot-filament, chemical vapor deposited, diamond thin films utilizing low energy ion irradiation was investigated. The films used in this study were boron doped polycrystalline diamond, deposited on p-type (100) oriented silicon substrates. A low voltage dc corona discharge with an oxygen plasma was used to sputter etch the films. Surfaces were investigated by scanning electron microscopy and profilometry. Etch rates were approximately 500 Å/min, depending on the various processing conditions. Characteristics of In/diamond/Si Schottky diodes were used to evaluate the electrical properties of diamond surfaces with various treatments. Results indicate that plasma etching can significantly affect Schottky device characteristics.
Diamond film technology has advanced to the point where electronic devices are now becoming feasible. In addition, diamond has outstanding mechanical properties. The energy given off in fusion reactions may be converted to a narrow-band light spectrum that can be absorbed by wide-bandgap photovoltaic cells to directly produce electricity. The properties of possible wide-bandgap photovoltaic cells are examined for the purpose of fusion energy conversion.
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