Effect of mechanical stress on current-voltage characteristics of thin film polycrystalline diamond Schottky diodes

Abstract

Articles you may be interested inTemperature dependence on current-voltage characteristics of nickel/diamond Schottky diodes on high quality boron-doped homoepitaxial diamond film Silver on diamond Schottky diodes formed on boron doped hotfilament chemical vapor deposited polycrystalline diamond films Schottky diodes utilized for mechanical stress effect studies were fabricated using aluminum contacts to polycrystalline diamond thin films grown by a hot-filament-assisted chemical vapor deposition process. Compressive stress was found to have a large effect on the forward biased current-voltage characteristics of the diode, whereas the effect on the reverse biased characteristics was relatively small. This stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects that dominated the diode current-voltage characteristics in the small and large bias regions, respectively. At a large constant forward bias current, a good linear relationship between output voltage and applied force was observed for force of less than 10 N, as predicted by the piezoresistance effect. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. Compared to either silicon or germanium junction diodes and tunnel diodes, polycrystalline diamond Schottky diodes not only are very stress sensitive but also have good linearity. This study shows polycrystalline diamond Schottky diodes have potential as mechanical sensors.

Effect of gas pressure on current-voltage characteristics of amorphous carbon film/silicon heterojunction

“…For example, the reverse current can increase by 3300% when the gas pressure decreases from 100 000 to 100 Pa. In the past, much work has been done on the effect of mechanical stress on the I-V characteristics of the carbon films, 11,12 however, there are few researches on the effect of gas pressure on the electrical transport properties of the carbon films. © 2007 American Institute of Physics.…”

High—temperature Sensors Based on SiC and Diamond Technology

“…Obviously the piezoresistive coefficients are strongly increased with increased resistivity, ie, with decreased doping concentration. However, care must be taken for lightly doped diamond, since it has been shown previously that piezojunction effects due to nonohmic contacts can have a significant effect on the measurement result [129]. …”

Growth and application of undoped and doped diamond films

“…with decreased doping concentration. However, care must be taken for lightly doped diamond, because it has been shown previously that piezojunction effects due to non-ohmic contacts can have a significant effect on the measurement result (Zhao et al 1993).…”