Constrained placement methodology for reducing SER under single-event-induced charge sharing effects

Entrena, Luis; Lindoso, Almudena; Millan,; Pagliarini, Samuel; Kastensmidt, Fernanda Lima

doi:10.1109/radecs.2011.6131298

Cited by 3 publications

(1 citation statement)

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“…Where G LET (l) is the linear energy transfer generation density and its unit is pairs/cm 3 , R(w, l) and T(t) are functions describing the spatial and temporal variations of the generation rate [8].…”

Section: Introductionmentioning

confidence: 99%

Research on the influence of charge sharing for SEE locations based on 65nm CMOS technology

Zhang

He²,

Luo

et al. 2015

2015 IEEE International Conference on Communication Problem-Solving (ICCP)

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This paper investigates a heavy ion impacts different locations dependency of charge sharing in 65nm CMOS technology. Three new types structures of charge sharing mechanism (NMOS-NMOS, PMOS-PMOS and NMOS-PMOS) are designed to evaluate the influence of single event effect, and TCAD simulation results reveal that the device sensitive node can collect a large number of charges when the heavy ion impacting location is closer to drain contact for NMOS, and when the location is closer to source contact for PMOS, the PMOS transistor sensitive node can collect much more charges. And the charge sharing will affect the reliability when the ion strikes the center between the two transistors no matter to PMOS or NMOS. The charge sharing influences of three types structures are compared, and it can be a guidance to improve the reliability of devices. Index Terms-Single Event Effect (SEE), Charge Sharing, Technology Computer-Aided Design(TCAD), 65nm CMOS.

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Section: Introductionmentioning

confidence: 99%