Constructing an n/n⁺ homojunction in a monolithic perovskite film for boosting charge collection in inverted perovskite photovoltaics

Abstract

The suboptimal carrier dynamics at perovskite/electron transport layer has largely limited the further performance enhancement of the state-of-the-art inverted p-i-n structured perovskite solar cells. Herein, we discovered that a simple...

An Integrated Bulk and Surface Modification Strategy for Gas‐Quenched Inverted Perovskite Solar Cells with Efficiencies Exceeding 22%

“…This would enable a suitable band bending and better energy‐level alignment, which are beneficial for charge transfer and the V oc improvement. [ 21,45 ]…”

“…In contrast, the gas‐quenching method has great potential for cost‐effective and large‐area device manufacturing, but the performance of gas‐quenched devices is currently lower than that of the state‐of‐the‐art devices fabricated with antisolvent‐assisted deposition. [ 20–23 ] So far, with various film and device optimization strategies, highly efficient gas‐quenched n–i–p PSCs with a best PCE of 23.6% have been reported. [ 24–27 ] As for the gas‐quenched inverted p–i–n PSCs, Liu et al obtained PCEs of 22.07% using a multifunctional sulfobetaine‐based zwitterionic surfactant to improve the film quality.…”

Inverted Perovskite Solar Cells: The Emergence of a Highly Stable and Efficient Architecture

“…As a result, the devices exhibited an outstanding V oc and FF values of 1.17 V and 83%, respectively, with the best device reaching a PCE of 21.4%. Lu et al [ 137 ] demonstrated that a simple modification of the perovskite surface with a trace amount of indium bromide (InBr 3 ) enabled beneficial n‐doping of the perovskite films, which effectively enhanced charge collection at the perovskite/C 60 interface. They concluded that the facilitated charge separation can be attributed to a n/n + homojunction between the bulk (weak n type (n) component) and the surface (more n type (n + ) component) in the perovskite film.…”

Internal Electric Field on Steering Charge Migration: Modulations, Determinations and Energy‐Related Applications

“…[ 9–13 ] With high feasibility and efficiency in managing directional migration of charge carriers, the internal electric field (IEF), are recently emerging as an up‐to‐date frontier in well modulating the bulk and surface charge dynamics for single‐component materials and interfacial charge dynamics for heterojunction systems, opening up a highway for advanced material design to high performance. [ 14,15 ]…”