Constructing and benchmarking a pulsed-RF, pulsed-bias S-parameter system

Baylis, Charles; Dunleavy, L.P.; Martens, J.

doi:10.1109/arftg.2005.8373133

Cited by 4 publications

(1 citation statement)

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“…특히 최근 Triquint사에서 발표된 고출력 GaN HEMT [1] 들 은 Ku-대역까지 사용 가능성을 제공하는데, 이들은 낮은 주파수에서 안정도가 낮아, 보통 항을 기술하였고 [2] , 바이어스-티 성능으로부터 RF pulse rise time의 관련성을 보였다. Baylis와 공동 연 구자들은 중심 주파수 2 GHz에서 pulse 측정을 위한 바이어스-티 설계 [3] 방법을 보였다. 그러나 이들의 바이어스-티는 좁은 대역폭을 갖고 있다.…”

Section: ⅰ 서 론unclassified

Design of a Microwave Bias-Tee Using Lumped Elements with a Wideband Characteristic for a High Power Amplifier

Oh¹,

Jeong²,

Yeom³

2011

The Journal of Korean Institute of Electromagnetic Engineering

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In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz～10 GHz.

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Section: ⅰ 서 론unclassified