Contact barriers modulation of graphene/β-Ga2O3 interface for high-performance Ga2O3 devices

Recent progress on the effects of impurities and defects on the properties of Ga2O3

“…Meanwhile, the minimum thermal conductivity κ min is closely related to the above elastic properties and can be obtained by the following formula: , where k B , N A , N , ρ , E , and M are the Boltzmann constants, Avogadro's number, the number of atoms in the unit cell, density, Young's modulus, and the weight of the unit cell, respectively. 23,133,134 Therefore, this also explains the reasons for the different thermal conductivity of bulk β-Ga 2 O 3 in different directions observed in the experiment from another aspect.…”

“…As for monoclinic β-Ga 2 O 3 , it has 13 kinds of elastic constants (C 11 , C 22 , C 33 , C 44 , C 55 , C 66 , C 12 , C 13 , C 15 , C 23 , C 25 , C 35 , and C 46 ). 23,130–132 They are usually obtained by first-principles calculations, as well as Young's modulus E , bulk modulus B , shear modulus G , and other mechanical constants. Note that the obvious differences of these mechanical constants in different orientations indicate that the mechanical properties of the bulk β-Ga 2 O 3 are anisotropic obviously.…”

Interfacial thermal transport of graphene/β-Ga2O3 heterojunctions: a molecular dynamics study with a self-consistent interatomic potential

“…3(a), and it should be noted that the graphene is placed above β-Ga 2 O 3 with a height of 3.0 Å initially. 55…”

“…where e is the energy parameter, s is the atomic length parameter and r is the interatomic distance. According to the universal force field, 54 55 In this work, the transient heating method 56,57 is employed to calculate the ITR between graphene and b-Ga 2 O 3 . In the molecular dynamics simulation, periodic boundary conditions are applied in x, y and z directions, and the time step is set to 0.5 fs.…”

Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

“…In contrast, the DTs of PbI/J-TMDs heterojunctions with PbI/X-MXY configuration enhance, whereas those of PbI/J-TMDs heterojunctions with PbI/Y-MXY configuration decline with the enlarging intrinsic To directly show the carrier transfer efficiency at the CsPbI 3 /J-TMDs heterojunctions, the tunneling probability (P TB ) is calculated as follows (Yuan et al, 2020(Yuan et al, , 2021) 1)…”