Contact-free defect investigation of wafer-annealed Fe-doped SI-InP

Hahn, S.; Dornich, K.; Hahn, Torsten; Köhler, Andreas; Niklas, J. R.

doi:10.1016/j.mssp.2006.01.077

Cited by 4 publications

(3 citation statements)

References 9 publications

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“…Investigations on indium phosphide show that the defect content changes during annealing processes, which may also have an impact on the distribution of electrical properties. Whereas the defect content of as‐grown samples depends on their position in the crystal, an equivalent set of defect levels is prominent in wafer‐annealed samples 22. Figure 10 shows a comparison of Fe‐doped SI‐InP samples from different crystal positions.…”

Section: Resultsmentioning

confidence: 99%

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Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

Berger

Schüler

Anger

et al. 2011

Physica Status Solidi (a)

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The contactless electrical characterization techniques MDP and MD‐PICTS will be presented in this paper. Both methods are predestined for defect investigation in a variety of semiconductors. Due to a so far not reached sensitivity, major advantages of MDP are its high spatial resolution and its measurement speed, which allows for two dimensional inline measurements at production speed. Furthermore a versatile numerical tool for simulations of electrical properties of a semiconductor as a function of defect parameters was developed. MD‐PICTS is a contactless temperature dependent measurement which allows the determination of activation energies of trap levels in the material. To demonstrate the abilities of both methods, measurements conducted at different semiconductor materials, e.g. silicon, silicon carbide, gallium arsenide and indium phosphide, will be presented exemplarily.

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Section: Resultsmentioning

confidence: 99%

“… Comparison of MD‐PICTS spectra of as‐grown Fe‐doped SI‐InP samples from different crystal positions and thus different Fe‐concentrations. The samples differ in their characteristic defect levels 22. …”

Section: Resultsmentioning

confidence: 99%

Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

Berger

Schüler

Anger

et al. 2011

Physica Status Solidi (a)

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“…MDP is a novel technique, which is used for inline applications as well as defect investigations [1][2][3]. The sample is excited with a rectangular laser pulse and the photoconductivity is measured via microwave absorption.…”

Section: Experimental Techniquementioning

confidence: 99%

High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements

Schüler

Mittelstraß

Dornich

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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Changes in the conduction type of a multicrystalline brick can occur, since a high phosphorus concentration is typical for the low quality feedstock that is usually used in PV industry. The inline detection of these changes is made possible via photoconductivity measurements. The measured photoconductivity depends strongly on the resistivity of the sample. With a developed computer algorithm the sharp raises of the photoconductivity at pn-changes can be detected in bricks. With these measurements it is possible to detect pn-changes with a one mm resolution as early as possible in the production process.

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Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region

Alyabyeva

Жукова

Belkin

et al. 2017

Sci Rep

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We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

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Contact-free defect investigation of wafer-annealed Fe-doped SI-InP

Cited by 4 publications

References 9 publications

Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements

Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region

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