Contact property between metal and tantalum nitride film characterized by using transmission line model

Obata, Motoki; Sakuda, Teruyuki; Abe, Katsuya; Hayashibe, Rinpei; Kamimura, Kazuo

doi:10.1016/j.surfcoat.2003.10.053

Cited by 10 publications

(5 citation statements)

References 4 publications

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“…4. [83][84][85][86][87][88] For the measurement of the contact resistance with TLM, the electrode material is deposited on a glass substrate and the layer is patterned with the gap between adjacent electrodes from 50 to 90 mm with a 5 mm increment. 84 The depth of the electrode, W is 0.5 cm and the electrode line width is 0.1 cm.…”

Section: Metal Work Function I-v Characteristics and Contact Resistancementioning

confidence: 99%

“…R T is calculated from the slope of the current-voltage curve for each electrode spacing. [83][84][85][86][87][88] Fig. 7 shows the current-voltage characteristics measured between the two adjacent TLM electrodes with a spacing of 50 mm and Fig.…”

Section: Metal Work Function I-v Characteristics and Contact Resistancementioning

confidence: 99%

“…From the slope of the curve, R S can be calculated. The specific contact resistance (r c ) can be calculated from 85,119…”

Section: Metal Work Function I-v Characteristics and Contact Resistancementioning

confidence: 99%

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Metal–semiconductor contact in organic thin film transistors

2008

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Section: Metal Work Function I-v Characteristics and Contact Resistancementioning

confidence: 99%

Section: Metal Work Function I-v Characteristics and Contact Resistancementioning

confidence: 99%

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Metal–semiconductor contact in organic thin film transistors

2008

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“…It is thus very easy to estimate the contact resistance from the current-voltage characteristics of such a device configuration [15,544]. For instance, a TLM scheme [106,[549][550][551][552][553] was implemented using an electrode material pattern deposited on a glass substrate with a gap between adjacent electrodes from 50 to 90 μm with an increment of 5 μm [553] and depositing the OS directly on this pattern. Total contact resistance was thus determined from the measured I-V characteristics of such OFETs.…”

Section: Interface Engineering For Os Devicesmentioning

confidence: 99%

Organic semiconductors for device applications: current trends and future prospects

Ahmad

2014

Journal of Polymer Engineering

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Abstract:With the rich experience of developing silicon devices over a period of the last six decades, it is easy to assess the suitability of a new material for device applications by examining charge carrier injection, transport, and extraction across a practically realizable architecture; surface passivation; and packaging and reliability issues besides the feasibility of preparing mechanically robust wafer/substrate of single-crystal or polycrystalline/ amorphous thin films. For material preparation, parameters such as purification of constituent materials, crystal growth, and thin-film deposition with minimum defects/ disorders are equally important. Further, it is relevant to know whether conventional semiconductor processes, already known, would be useable directly or would require completely new technologies. Having found a likely candidate after such a screening, it would be necessary to identify a specific area of application against an existing list of materials available with special reference to cost reduction considerations in large-scale production. Various families of organic semiconductors are reviewed here, especially with the objective of using them in niche areas of large-area electronic displays, flexible organic electronics, and organic photovoltaic solar cells. While doing so, it appears feasible to improve mobility and stability by adjusting π-conjugation and modifying the energy bandgap. Higher conductivity nanocomposites, formed by blending with chemically conjugated C-allotropes and metal nanoparticles, open exciting methods of designing flexible contact/interconnects for organic and flexible electronics as can be seen from the discussion included here.

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“…Thin-film resistors of copper-nickel ͑CuNi͒, 1,2 nichrome ͑NiCr͒, 3,4 and tantalum nitride ͑Ta 2 N͒, 5,6 were commonly used for microelectronics, portable terminal ⌸-type attenuators, and telecommunication devices. Especially, for the reliability of the resistors in ⌸-type attenuators, films are required to have an adequate specific resistivity and a near-zero TCR.…”

mentioning

confidence: 99%

Structural and Electrical Properties of TiN[sub x]O[sub y] Thin-Film Resistors for 30 dB Applications of π-type Attenuator

Cương

Kim²,

Kang

et al. 2006

J. Electrochem. Soc.

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Titanium oxyhonitride ͑TiN x O y ͒ thin films were deposited on SiO 2 /Si substrates using reactive dc magnetron sputtering and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. Crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance ͑TCR͒ of the films varies from a positive value to a negative value. The films annealed at 350°C for 30 min exhibited a near-zero TCR value of approximately −5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during annealing treatment.Thin-film resistors of copper-nickel ͑CuNi͒, 1,2 nichrome ͑NiCr͒, 3,4 and tantalum nitride ͑Ta 2 N͒, 5,6 were commonly used for microelectronics, portable terminal ⌸-type attenuators, and telecommunication devices. Especially, for the reliability of the resistors in ⌸-type attenuators, films are required to have an adequate specific resistivity and a near-zero TCR. A near-zero temperature coefficience of resistance ͑TCR͒ means that the materials show a constant electric resistance over a wide range of temperatures. However, materials such as CuNi, NiCr, and Ta 2 N have a drawback, i.e., their rather low resistivity. 7-9 Hence, these materials are not suitable for the applications ͑in 30 dB of ⌸-type attenuators͒ where a high resistivity is required. We studied tantalum nitride and titanium nitride thin films with an excessive nitrogen concentration to achieve a high resistivity. These materials were satisfactory in the case of resistivity, but the TCR is seen to be highly negative. 10 For this reason, development of the materials to achieve high resistivity and a nearzero TCR is actually a challenge. In this work, we developed the TiN x O y materials with both a high resistivity and a near-zero TCR for 30 dB of ⌸-type attenuator. For 30 dB applications of ⌸-type attenuator, sheet resistance of the titanium oxy-nitride films should be at least 600 ⍀/ᮀ and the TCR should be in the range of −100 to 100 ppm/K. An optimum sheet resistance and a TCR can be realized by controlling the annealing temperature in an air ambient.In this study, titanium oxynitride thin films were prepared on oxidized silicon substrates at room temperature and were then annealed at various temperatures in air ambient. The heat treatment in air ambient was performed for oxygen incorporation into the TiN films for the film resistivity suitable to 30 dB applications of ⌸-type attenuator. The structural and electrical properties including composition, phase structure, resistivity, and TCR are characterized as a function of annealing temperature. ExperimentalTitanium oxynitride thin films about 300 n...

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Contact property between metal and tantalum nitride film characterized by using transmission line model

Cited by 10 publications

References 4 publications

Metal–semiconductor contact in organic thin film transistors

Metal–semiconductor contact in organic thin film transistors

Organic semiconductors for device applications: current trends and future prospects

Structural and Electrical Properties of TiN[sub x]O[sub y] Thin-Film Resistors for 30 dB Applications of π-type Attenuator

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