Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

Du, Yuchen; Li, Yang; Liu, Han; Ye, Peide D.

doi:10.1063/1.4894198

Cited by 49 publications

(42 citation statements)

References 96 publications

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“…96 Degenerate doping of the contact regions of MX 2 FET devices has proved to be effective in minimizing the Schottky barrier and lowering the contact resistance. 161 and references therein). 10a), potassium vapour 159 (Fig.…”

Section: Non-volatile Dopingmentioning

confidence: 99%

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

2015

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Recent explosion of interest in two-dimensional (2D) materials research has led to extensive exploration of physical and chemical phenomena unique to this new class of materials and their technological potential. Atomically thin layers of group 6 transition metal dichalcogenides (TMDs) such as MoS2 and WSe2 are remarkably stable semiconductors that allow highly efficient electrostatic control due to their 2D nature. Field effect transistors (FETs) based on 2D TMDs are basic building blocks for novel electronic and chemical sensing applications. Here, we review the state-of-the-art of TMD-based FETs and summarize the current understanding of interface and surface effects that play a major role in these systems. We discuss how controlled doping is key to tailoring the electrical response of these materials and realizing high performance devices. The first part of this review focuses on some fundamental features of gate-modulated charge transport in 2D TMDs. We critically evaluate the role of surfaces and interfaces based on the data reported in the literature and explain the observed discrepancies between the experimental and theoretical values of carrier mobility. The second part introduces various non-covalent strategies for achieving desired doping in these systems. Gas sensors based on charge transfer doping and electrostatic stabilization are introduced to highlight progress in this direction. We conclude the review with an outlook on the realization of tailored TMD-based field-effect devices through surface and interface chemistry.

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Section: Non-volatile Dopingmentioning

confidence: 99%

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

2015

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“…However, several issues, such as the influence of Fermi-level pinning on the contact resistance, 11,12 the effect of electrostatic screening in multilayered devices, 13 and material degradation, remain unsolved. These can greatly limit the device performance, especially for the short-channel and high-mobility FETs.…”

Section: Full-range Electrical Characteristics Of Ws 2 Transistorsmentioning

confidence: 99%

Full-range electrical characteristics of WS2 transistors

Kumar

Kuroda

Bellus

et al. 2015

Applied Physics Letters

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Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior We fabricated transistors formed by few layers to bulk single crystal WS 2 to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (<10 12 cm -2 ) is a limiting factor for the subthreshold swing. Furthermore, the superior crystalline quality and the low interface trap density enabled the subthreshold swing to approach the theoretical limit on a back-gated device on SiO 2 /Si substrate. V C 2015 AIP Publishing LLC.

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“…W, Au, Pd, and Ni, and that would be expected to form a high electron Schottky barrier with MoS 2 . [12][13][14][15][16][17][18][19][20] In another study, 21 the conductivity polarity measured on gold nanoparticles deposited on MoS 2 using I-V and Raman measurements also showed substantial inconsistencies. In that study, the n-and p-type behavior was measured on samples that were prepared in an identical manner and the variability was explained by the difference in MoS 2 thickness and/or by the Au-MoS 2 interface interaction.…”

mentioning

confidence: 93%

Impurities and Electronic Property Variations of Natural MoS₂Crystal Surfaces

et al. 2015

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Room temperature X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICPMS), high resolution Rutherford backscattering spectrometry (HR-RBS), Kelvin probe method, and scanning tunneling microscopy (STM) are employed to study the properties of a freshly exfoliated surface of geological MoS2 crystals. Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV. The presence of impurities in parts-per-million (ppm) and a surface defect density of up to 8% of the total area could explain the variation of the Fermi level position. High resolution RBS data also show a large variation in the MoSx composition (1.8 < x < 2.05) at the surface. Thus, the variation in the conductivity, the work function, and stoichiometry across small areas of MoS2 will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication.

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Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

Cited by 49 publications

References 96 publications

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

Full-range electrical characteristics of WS2 transistors

Impurities and Electronic Property Variations of Natural MoS₂Crystal Surfaces

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Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

Cited by 49 publications

References 96 publications

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

Full-range electrical characteristics of WS2 transistors

Impurities and Electronic Property Variations of Natural MoS2Crystal Surfaces

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Impurities and Electronic Property Variations of Natural MoS₂Crystal Surfaces