Contact technology schemes for advanced Ge and III-V CMOS technologies

Claeys, Cor; Firrincieli, Andrea; Martens, Koen; Kittl, Jorge; Simoen, Eddy

doi:10.1109/iccdcs.2012.6188889

Cited by 2 publications

(1 citation statement)

References 56 publications

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“…Figure c summarizes the ρ c values of the primary Ohmic contact examples in GaAs and our works. − Most contactsboth alloyed and nonalloyed Ohmic contactsexhibit ∼10 –5 Ω cm 2 or ∼10 –6 Ω cm 2 for moderately doped or heavily doped GaAs, respectively. However, the novel CF-MIS contact proposed in this work exhibits one of the lowest ρ c values [(1.5 ± 0.6) × 10 –6 Ω cm 2 ] ever obtained, even though the doping concentration of the GaAs substrate was moderate (1 × 10 18 cm –3 ).…”

Section: Resultsmentioning

confidence: 79%

Novel Conductive Filament Metal–Interlayer–Semiconductor Contact Structure for Ultralow Contact Resistance Achievement

Kim

Park

et al. 2018

ACS Appl. Mater. Interfaces

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In the post-Moore era, it is well-known that contact resistance has been a critical issue in determining the performance of complementary metal-oxide-semiconductor (CMOS) reaching physical limits. Conventional Ohmic contact techniques, however, have hindered rather than helped the development of CMOS technology reaching its limits of scaling. Here, a novel conductive filament metal-interlayer-semiconductor (CF-MIS) contact-which achieves ultralow contact resistance by generating CFs and lowering Schottky barrier height (SBH)-is investigated for potential applications in various nanodevices in lieu of conventional Ohmic contacts. This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of semiconductor is first introduced. The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to ∼×700 000 reduction compared to that of the conventional metal-semiconductor contact. This study proves the viability of CF-MIS contacts for future Ohmic contact schemes and that they can easily be extended to mainstream electronic nanodevices that suffer from significant contact resistance problems.

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