Contactless characterization of manganese and carbon delta-layers in gallium arsenide

Комков, О. С.; Kudrin, A. V.

doi:10.1134/s1063782617110161

Cited by 4 publications

(2 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This fact (the carrier concentration increase as the result of ion irradiation) is unusual for GaAs moderately doped with a shallow impurity and therefore requires an explanation. These results are consistent with the suggestion that in structures with the Mn δ-layer the formation of the Mn impurity band occurs [23]. Moreover, the results can be analyzed under the assumption that the transport properties of the structures are determined by two conduction channels (IB and VB).…”

Section: Methodssupporting

confidence: 89%

“…As the reference value of the sheet concentration p VB at 295 K, the p VB value for the reference structure with the carbon δ-layer was taken (p VB ~ 10 12 cm -2 , the structure 7669 in [23]), since this structure has the built-in electric field (≈ 36 kV/cm) comparable with that of the structure with Mn δ-layer (≈ 23 kV/cm) [23,25]. As the reference values of the hole mobility μ VB the corresponding experimental values obtained for the other reference structure (uniformly Mn doped GaAs layer) were used.…”

Section: Transport Propertiesmentioning

confidence: 99%

See 1 more Smart Citation

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Kudrin

Vikhrova

Danilov

et al. 2019

Journal of Magnetism and Magnetic Materials

View full text Add to dashboard Cite

We investigate the nature of transport and ferromagnetic properties of the epitaxial GaAs structure with the Mn δdoped layer. To modify the properties of the structure electrically active radiation defects are created by irradiation with 50 keV helium ions and a fluence in the range of 1 × 10 11 -1 × 10 13 cm -2 . The investigations show that transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in a valence band and the channel associated with electron transport in the Mn-related impurity band) and that ferromagnetic properties are determined by electrons localized at allowed states within the Mn impurity band. The ferromagnetic properties of the Mn δ-layer region cannot be affected by the closely located InGaAs quantum well, since the presence of quantum well has negligible influence on the Mn impurity band filling by electrons.

show abstract

Section: Methodssupporting

confidence: 89%