Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel

Interisland-Distance-Mediated Growth of Centimeter-Scale Two-Dimensional Magnetic Fe3O4 Arrays with Unidirectional Domain Orientations

“…Some wrinkles (indicated by the white arrow) are observed on Fe 3 O 4 films, because of the different thermal expansion coefficients of Fe 3 O 4 and mica. A similar phenomenon has also been demonstrated on a single-crystal graphite film . To further determine the single-crystal feature of Fe 3 O 4 film, electron backscatter diffraction (EBSD) measurements were performed on a sample transferred onto Au foil, and the uniform color distribution indicates its single-crystal property (Figure S8).…”

“…More significantly, centimeter-scale Fe 3 O 4 nanosheet arrays with unidirectional orientations are successfully synthesized on mica ( A similar phenomenon has also been demonstrated on a single-crystal graphite film. 37 To further determine the single-crystal feature of Fe 3 O 4 film, electron backscatter diffraction (EBSD) measurements were performed on a sample transferred onto Au foil, and the uniform color distribution indicates its single-crystal property (Figure S8). The chemical states and elemental compositions of obtained samples were characterized by X-ray photoelectron spectroscopy (XPS), with the results being shown in Figure 1h and Figure S9.…”

Flexible Large-Area Graphene Films of 50–600 nm Thickness with High Carrier Mobility

“…Meantime, the structural defects in CVD-grown graphite nanofilms, such as edges, stacking disorders, heterogeneous thickness, and wrinkles, are challenging to remove due to the carbon diffusion mechanism, significantly lowering their electrical and thermal conducting performances. Zhang et al reported a single-crystal graphite film (about 3 cm) with an improved CVD strategy [ 10 ]. Nevertheless, the thickness uniformity in the nanoscale is still a challenge.…”

Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

“…7,[15][16][17] However, the synthesis of large and thick single-crystal van der Waals (vdW) materials is difficult due to the lack of out-of-plane bonds, which weakens the epitaxial connection between adjacent layers. [18][19][20][21] Among many issues, the large lattice mismatch between the epitaxial layer and heterogeneous substrate makes crystal growth difficult, leading to high-density dislocations and residual stress, causing thick films to crack, and deteriorating the crystal quality of the epitaxial layer. 22 Among other heterogeneous substrates, the metallic Ni substrate is well-suited for h-BN growth because the in-plane lattice constants of h-BN and Ni are quite similar, at 2.50 Å and 2.49 Å, respectively.…”