Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures

Wang, Xue; Li, Shunfeng; Mohajerani, Majid H.; Ledig, Johannes; Wehmann, H.-H.; Mandl, Martin; Straßburg, Martin; Steegmüller, U.; Jahn, U.; Lähnemann, Jonas; Riechert, H.; Griffiths, Ian; Cherns, D.; Waag, A.

doi:10.1021/cg4003737

Cited by 79 publications

(75 citation statements)

References 31 publications

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“…The structural geometry (pyramidal top of the GaN column) is similar to those grown by other groups using MOCVD [12,21,22] as well as MBE [23]. Typically, self-organized structures exhibit flat tops (no pyramidal tip) [11,18].…”

Section: Resultssupporting

confidence: 61%

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The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Foltynski

Garro

Vallo

et al. 2015

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 61%

“…A necessary condition to fulfil the mentioned requirements is precise growth control. The growth of such GaN nano-and micro-structures seems to be understood on sapphire substrates [11][12][13][14][15][16][17]. However, transferring this knowledge onto silicon as a substrate is still a critical challenge [18,19].…”

Section: Introductionmentioning

confidence: 99%

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Foltynski

Garro

Vallo

et al. 2015

Journal of Crystal Growth

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“…The same effect was also observed for the growth of Ga-polar GaN columns. 3,28,29 Nevertheless, the strong increase of the vertical growth rate in the case of the GaN columns growth under a high silane flow could be explained by a locally enhanced reaction rate on the N-polar-c-plane top facet.…”

Section: A Growth Model Of Selective Area Movpementioning

confidence: 99%

Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Wang

Hartmann

Mandl

et al. 2014

Journal of Applied Physics

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Articles you may be interested inReal-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c-and mplane single crystals Appl. Phys. Lett. 105, 051602 (2014); 10.1063/1.4892349Surface diffusion and layer morphology of ( ( 11 2 ¯ 2 ) ) GaN grown by metal-organic vapor phase epitaxyIn situ spectroscopic ellipsometry study of GaN nucleation layer growth and annealing on sapphire in metalorganic vapor-phase epitaxy J. Appl. Phys. 98, 033522 (2005);Three-dimensional GaN columns recently have attracted a lot of attention as the potential basis for core-shell light emitting diodes for future solid state lighting. In this study, the fundamental insights into growth kinetics and mass transport mechanisms of N-polar GaN columns during selective area metal organic vapor phase epitaxy on patterned SiO x /sapphire templates are systematically investigated using various pitch of apertures, growth time, and silane flow. Species impingement fluxes on the top surface of columns J top and on their sidewall J sw , as well as, the diffusion flux from the substrate J sub contribute to the growth of the GaN columns. The vertical and lateral growth rates devoted by J top , J sw and J sub are estimated quantitatively. The diffusion length of species on the SiO x mask surface k sub as well as on the sidewall surfaces of the 3D columns k sw are determined. The influences of silane on the growth kinetics are discussed. A growth model is developed for this selective area metal organic vapor phase epitaxy processing. V C 2014 AIP Publishing LLC. [http://dx.

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“…14 In the context of light emission, this interest is particularly driven by the use of the nonpolar facets (mplane) as templates for the growth of multiple-quantum wells yielding sidewall light emission free of polarization effects. 8,9,11,13,15,16 Similar to the planar epitaxial case, measurements of material properties such as doping levels and minority carrier (or exciton 17 ) diffusion lengths are crucial to fabricate efficient optoelectronic devices. Minority carrier diffusion lengths in wire semiconductors have been probed using different methods such as cathodoluminescence (CL), 18−20 electron beam induced current (EBIC), 5,21 time-resolved scanning photocurrent microscopy (SPCM), 22 SPCM combined with a nearfield scanning optical microscopy (NSOM), 23−25 a combined atomic force microscope (AFM)/NSOM system, 26 or ultrafast optical microscopy.…”

mentioning

confidence: 99%

Direct Imaging of p–n Junction in Core–Shell GaN Wires

et al. 2014

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While core−shell wire-based devices offer a promising path toward improved optoelectronic applications, their development is hampered by the present uncertainty about essential semiconductor properties along the threedimensional (3D) buried p−n junction. Thanks to a crosssectional approach, scanning electron beam probing techniques were employed here to obtain a nanoscale spatially resolved analysis of GaN core−shell wire p−n junctions grown by catalyst-free metal−organic vapor phase epitaxy on GaN and Si substrates. Both electron beam induced current (EBIC) and secondary electron voltage constrast (VC) were demonstrated to delineate the radial and axial junction existing in the 3D structure. The Mg dopant activation process in p-GaN shell was dynamically controlled by the ebeam exposure conditions and visualized thanks to EBIC mapping. EBIC measurements were shown to yield local minority carrier/exciton diffusion lengths on the p-side (∼57 nm) and the n-side (∼15 nm) as well as depletion width in the range 40−50 nm. Under reverse bias conditions, VC imaging provided electrostatic potential maps in the vicinity of the 3D junction from which acceptor N a and donor N d doping levels were locally determined to be N a = 3 × 10 18 cm −3 and N d = 3.5 × 10 18 cm −3 in both the axial and the radial junction. Results from EBIC and VC are in good agreement. This nanoscale approach provides essential guidance to the further development of core−shell wire devices.

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Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures

Cited by 79 publications

References 31 publications

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Direct Imaging of p–n Junction in Core–Shell GaN Wires

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