Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Abstract

Articles you may be interested inReal-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c-and mplane single crystals Appl. Phys. Lett. 105, 051602 (2014); 10.1063/1.4892349Surface diffusion and layer morphology of ( ( 11 2 ¯ 2 ) ) GaN grown by metal-organic vapor phase epitaxyIn situ spectroscopic ellipsometry study of GaN nucleation layer growth and annealing on sapphire in metalorganic vapor-phase epitaxy J. Appl. Phys. 98, 033522 (2005);Three-dimensional GaN columns recently have attracted a lot of attention as the potential basis for core-shell light emitting diodes for future solid state lighting. In this study, the fundamental insights into growth kinetics and mass transport mechanisms of N-polar GaN columns during selective area metal organic vapor phase epitaxy on patterned SiO x /sapphire templates are systematically investigated using various pitch of apertures, growth time, and silane flow. Species impingement fluxes on the top surface of columns J top and on their sidewall J sw , as well as, the diffusion flux from the substrate J sub contribute to the growth of the GaN columns. The vertical and lateral growth rates devoted by J top , J sw and J sub are estimated quantitatively. The diffusion length of species on the SiO x mask surface k sub as well as on the sidewall surfaces of the 3D columns k sw are determined. The influences of silane on the growth kinetics are discussed. A growth model is developed for this selective area metal organic vapor phase epitaxy processing. V C 2014 AIP Publishing LLC. [http://dx.

The anti-surfactant effect of silane on the facets-controlled growth of GaN nanorods by MOCVD

“…SiN x is formed on the sidewall with necessary condition, which is not likely within the growth window for GaN nanorods. Wang et al reported that the silane flux does not influence the diffusion length of species on substrate, while has much more effect on that of the sidewall [8]. The vertical growth rate of nanorods increases 3 times when the silane flux increases from 16.5 to 165 nmol/min.…”

“…In the continuous growth mode a lot of parameters were studied on the morphology and uniformity of nanorods, such as V/III ratio, temperature, polarity, carrier gas and doping, etc [11e14]. Growth kinetics and mass transport mechanisms of GaN nanorods are demonstrated by some reports [1,3,8]. The silane is often used to form a vertical nanorod.…”

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

“…However, the PL intensity decreased as the SiH 4 flow increased, indicating the reduced crystal quality of the GaN microrods [21]. To date, the majority of 3D GaN structures fabricated by selective area growth (SAG) have involved MOCVD with a continuous flux [21][22][23] or pulse-mode growth [12,[24][25][26], and MBE [27]. In contrast, there have been few reports on the growth of 3D GaN structures by SAG-HVPE because of the difficulty in achieving elongated structures [28].…”

“…Koester et al showed that a SiH 4 flow can play an important role in enhancing the axial growth rate [10]. However, the PL intensity decreased as the SiH 4 flow increased, indicating the reduced crystal quality of the GaN microrods [21]. To date, the majority of 3D GaN structures fabricated by selective area growth (SAG) have involved MOCVD with a continuous flux [21][22][23] or pulse-mode growth [12,[24][25][26], and MBE [27].…”

Modeling of semiconductor nanowire selective-area MOCVD growth

“…As a result of the intensive studies, the growth conditions of III-V NW have been found. Also, the following facts regarding the impact of the mask size and pitch on the NW morphology have been estimated: (i) at the mask edges, the NW growth rate is usually several times higher than that in the middle part of the mask [3,4]; (ii) the NW growth rate decreases with the increase of the mask window size [1,5]; (iii) the increase of the mask pitch p leads to the increase [6] or decrease [1] of the NW length. The first dependence is explained by the additional gas-phase and surface fluxes of species from the area without the mask windows to the NW array [3,4].…”