Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

Lekhal, Kaddour; Bae, Si‐Young; Lee, Hojun; Mitsunari, Tadashi; Tamura, Akira; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

doi:10.1016/j.jcrysgro.2016.05.008

Cited by 9 publications

(4 citation statements)

References 46 publications

(58 reference statements)

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“…While it can also be observed under N-rich condition in experiments. These experimental phenomena may mainly result from kinetic effects, like the Ga diffusion length [55] etc., and impurity passivation, as is also suggested by previous experiments 9 / 12 [57]. All these affecting factors are out of the scope of this paper and may require further investigations.…”

Section: / 12supporting

confidence: 53%

Stability of wurtzite semipolar surfaces: Algorithms and practices

Zhang

Zhu

2018

Phys. Rev. Materials

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A complete knowledge of absolute surface energies with any arbitrary crystal orientation is important for the improvements of semiconductor devices because it determines the equilibrium and nonequilibrium crystal shapes of thin films and nanostructures. It is also crucial in the control of thin film crystal growth and surface effect studies in broad research fields. However, obtaining accurate absolute formation energies is still a huge challenge for the semi-polar surfaces of compound semiconductors. It mainly results from the asymmetry nature of crystal structures and the complicated step morphologies and related reconstructions of these surface configurations. Here we propose a general approach to calculate the absolute formation energies of wurtzite semi-polar surfaces by first-principles calculations, taking GaN as an example. We mainly focused on two commonly seen sets of semi-polar surfaces: a-family (112 ̅ X) and m-family (101 ̅ X). For all the semi-polar surfaces that we have calculated in this paper, the self-consistent accuracy is within 1.5 meV/Å 2 . Our work fills the last technical gap to fully investigate and understand the shape and morphology of compound semiconductors.

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Section: / 12supporting

confidence: 53%

Stability of wurtzite semipolar surfaces: Algorithms and practices

Zhang

Zhu

2018

Phys. Rev. Materials

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“…However, as shown in Figure 3E , sub-surface micro cracks also appeared that would detract from the ability to obtain a thick GaN film and a free-standing GaN substrate. It has been reported that the lateral overgrowth of GaN could be passivated under rich ambient H 2 gas and change the GaN nucleus into 3D islands for the use of both MOCVD (Tadatomo et al, 1999 ) and the HVPE technique (André et al, 2012 ; Lekhal et al, 2016 ). This results in high single-crystal quality for GaN film, due to dislocation bending and termination on the inclined planes (Hiramatsu et al, 2000 ; Imade et al, 2011 ).…”

Section: Resultsmentioning

confidence: 99%

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE

et al. 2021

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Free-standing GaN substrates are urgently needed to fabricate high-power GaN-based devices. In this study, 2-inch free-standing GaN substrates with a thickness of ~250 μm were successfully fabricated on double-polished sapphire substrates, by taking advantage of a combined buffer layer using hydride vapor phase epitaxy (HVPE) and the laser lift-off technique. Such combined buffer layer intentionally introduced a thin AlN layer, using a mix of physical and chemical vapor deposition at a relatively low temperature, a 3-dimensional GaN interlayer grown under excess ambient H2, and a coalescent GaN layer. It was found that the cracks in the epitaxial GaN layer could be effectively suppressed due to the large size and orderly orientation of the AlN nucleus caused by pre-annealing treatment. With the addition of a 3D GaN interlayer, the crystal quality of the GaN epitaxial films was further improved. The 250-μm thick GaN film showed an improved crystalline quality. The full width at half-maximums for GaN (002) and GaN (102), respectively dropped from 245 and 412 to 123 and 151 arcsec, relative to those without the 3D GaN interlayer. The underlying mechanisms for the improvement of crystal quality were assessed. This method may provide a practical route for fabricating free-standing GaN substrates at low cost with HVPE.

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“…Therefore, selective growth using a mask is a good choice, which not only avoids the damage caused by etching, but also has the characteristics of orderly and controllable growth. [ 15–18 ] In this article, the InGaN/AlGaN MQW microrod array structure was grown using the microhole mask, and its structure and luminescence characteristics were analyzed.…”

Section: Introductionmentioning

confidence: 99%

Structure and Luminescence Properties of InGaN/AlGaN Multiquantum‐Well Microrod Array Structures

Peng

et al. 2022

Physica Status Solidi (a)

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The InGaN/AlGaN multiquantum‐well microrod‐array structure is grown on c‐plane GaN template with SiO2 microholes patterned as a mask. The surface morphology exhibits the accurately ordered microrod‐array structure. Temperature‐dependent photoluminescence (PL) measurement indicates that the PL peaks redshift as the temperature increases. Room‐temperature PL and cathode luminescence spectra show that the different positions on InGaN/AlGaN microrod arrays have different luminous peaks. The successful fabrication of InGaN/AlGaN microrod arrays is of great significance for the realization of multicolor emission and the design of new optoelectronic devices.

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Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

Cited by 9 publications

References 46 publications

Stability of wurtzite semipolar surfaces: Algorithms and practices

Stability of wurtzite semipolar surfaces: Algorithms and practices

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE

Structure and Luminescence Properties of InGaN/AlGaN Multiquantum‐Well Microrod Array Structures

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