Continuous model for independent double gate MOSFET

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

“…However the precision is smaller if the approximated solution to (14) is used, which is necessary to obtain analytical and compact solutions for the model. The analytical solutions in (15) present some similarities with [9] but the parameters V 0 and Q 0 are completely different. This comes from the fact that in our model, these equations were rigorously obtained from Poisson's equation, while in [9] these are a starting hypothesis of the derivation.…”

“…The analytical solutions in (15) present some similarities with [9] but the parameters V 0 and Q 0 are completely different. This comes from the fact that in our model, these equations were rigorously obtained from Poisson's equation, while in [9] these are a starting hypothesis of the derivation.…”

“…2. In this way, the channels are coupled together by a coupling charge Q 0 [9]. Q 0 can be viewed as the charge accumulated at the gate when the silicon film is depleted.…”

“…Indeed, this structure is equivalent to a completely asymmetric DGMOSFET (ADGMOSFET). Some approaches have been published in the past, but some assume identical gate oxide thicknesses, so that the asymmetry only comes from a difference in the gate biases and work-functions [6][7][8][9]. For independent gate operation [10][11][12][13][14], most of the models rely on accurate solutions for the potentials, from which others quantities are derived.…”

COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs

“…(5) from x 0 to the surface gives the following solution, expressed in terms of Q g : (7) Additionally, as in weak inversion C is supposed very small, a Taylor expansion can be done to give:…”