Compact Models for Advanced CMOS Devices

Analytical Modeling of Double Gate Graded-Channel SOI Transistors for Analog Applications

“…Neglecting the quadratic terms, one can solve V TRAN for triode region as the following equation [1]: [1] In saturation region, the same current conservation technique is applied, but using existing DG models for each doping side. To calculate the drain current in the HD device, I DS,HD , we used the model proposed in reference (8). This model is continuous in all operation regimes and needs no fitting parameters, as it is a physically charge-based model.…”