Continuous-wave operation of 1.30 µm GaAsSb/GaAsVCSELs

Anan, T.; Yamada, M.; Nishi, Kenichi; Kurihara, K.; Tokutome, K.; Kamei, A.; Sugou, S.

doi:10.1049/el:20010405

Cited by 56 publications

(16 citation statements)

References 8 publications

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“…GaAsSb/ GaAs quantum wells ͑QWs͒ have been shown to be one of the most suitable candidates for 1.3 m active regions on the GaAs substrate. [1][2][3][4][5][6][7][8][9][10][11] To further improve VCSEL performance, it is necessary to understand the limitations of this material system and the interaction of the various parameters that impact overall device performance. For example, the gain of this material system is restricted by a less than ideal electron-hole wave function overlap caused by a combination of strongly confined holes and weakly confined electrons, which is a result of a nearly flat conduction band alignment between GaAs and GaAsSb.…”

Section: Introductionmentioning

confidence: 99%

Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers

Johnson

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inGaAs-based room-temperature continuous-wave 1.59 μ m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy Appl. Phys. Lett. 87, 231121 (2005) GaAsSb/ GaAs quantum well ͑QW͒ lasers grown by solid source molecular beam epitaxy are fabricated into ridge lasers and tested. These devices have a lasing wavelength around 1.2 m that is substantially blueshifted relative to the electroluminescence peak. The magnitude of the blueshift increases as the cavity length is shortened, indicating that the blueshift increases with injection level. This blueshift is attributed to material gain saturation and band filling effects. The internal quantum efficiency is ϳ75%, the transparency current density is ϳ120 A / cm 2 , and the threshold characteristic temperature is ϳ60 K, all typical for GaAsSb/ GaAs based edge emitting lasers. The extracted gain constant is ϳ800 cm −1 for single QW active regions and approximately half that amount for double QWs. This discrepancy is attributed to nonuniform carrier distribution in double QW structures.

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Section: Introductionmentioning

confidence: 99%

Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers

Johnson

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…[1][2][3][4][5][6] While the type-I structures found their application in light emitting devices, the unique properties of type-II GaAsSb/GaAs heterostructures can result in substantial improvements in the performance of near infrared detectors and heterojunction bipolar transistors. 7,8 Type-II GaAsSb/GaAs QWs [9][10][11] have also been used in the development of laser diodes emitting at 1.3 m, which may provide an interesting alternative to GaAs-based telecommunications lasers based on highly strained InGaAs/GaAs QWs, dilute nitride QWs, or InAs quantum dots.…”

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confidence: 99%

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

Baranowski

Syperek

Kudrawiec

et al. 2011

Applied Physics Letters

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells Baranowski, M.; Syperek, M.; Kudrawiec, R.; Misiewicz, J.; Gupta, J.A.; Wu, X.; Wang, R.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21271287&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=21271287&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.3548544Applied Physics Letters, 98, 6, 2011 Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells The carrier dynamics in type-II GaAsSb/GaAs quantum well ͑QW͒ is investigated by time-resolved photoluminescence at low temperature. A detailed analysis of the experimental data reveal a complex carrier relaxation scenario involving both delocalized and localized states. We show that the QW emission is controlled by the dynamics of the band bending effect, related to temporal changes in the spatial charge separation near the GaAsSb/GaAs heterointerface, whereas localized states play a significant role in the carrier relaxation/redistribution between QW states.

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“…14 As a result, high internal quantum efficiency edge-emitting lasers ͑EELs͒ and high power VCSELs have been demonstrated using this active region structure. 8,11,12,16 Realizing GaAsSb/ GaAs based VCSELs can be challenging because a nearly flat conduction band alignment between GaAs and GaAsSb results in the weak confinement of electrons and the strong confinement of holes and a less than ideal electron-hole wave function overlap that limits gain. 15,17 Furthermore, the combination of limited gain and in-plane composition fluctuations bring about a significant blueshift in the gain peak under injection.…”

Section: -12mentioning

confidence: 99%

High performance GaAsSb∕GaAs quantum well lasers

Yu¹,

Ding²,

Wang³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Nitrogen incorporation and optical studies of Ga As Sb N ∕ Ga As single quantum well heterostructures J. Appl. Phys. 102, 053106 (2007) GaAsSb/ GaAs quantum wells ͑QWs͒ with 1.3 m light emission are grown using solid-source molecular beam epitaxy. The growth temperature is optimized based on photoluminescence ͑PL͒ linewidth and intensity and edge-emitting laser ͑EEL͒ threshold current density; these measurements concur that the optimal growth temperature is ϳ490°C ͑ϳ500°C͒ for GaAsSb/ GaAs QWs grown with ͑without͒ GaAsP strain compensation. High performance EELs and vertical-cavity surface-emitting lasers ͑VCSELs͒ are demonstrated using the GaAsSb/ GaAs/ GaAsP strain compensated active region. One EEL achieved an output power up to 0.9 W with thresholds as low as 356 A / cm 2 under room temperature pulsed operation, while another achieved continuous-wave ͑cw͒ operation at temperatures up to 48°C for wavelengths as long as 1260 nm. A set of VCSELs achieved room temperature cw operation with output powers from 0.03 to 0.2 mW and lasing wavelengths from 1240 to 1290 nm. The temperature characteristics of these devices indicate that the optimal gain-peak cavity-mode tuning for pulsed operation specifies a room temperature PL peak redshift of 20-30 nm relative to the cavity mode.

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Continuous-wave operation of 1.30 µm GaAsSb/GaAsVCSELs

Cited by 56 publications

References 8 publications

Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers

Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

High performance GaAsSb∕GaAs quantum well lasers

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