Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

Lu, Tien−Chang; Chen, Shih Wei; Wu, Tzeng Tsong; Tu, Po-Min; Chen, Chien Kang; Chen, Cheng-Huan; Li, Zhen Yu; Kuo, Hao‐Chung; Wang, Shing Chung

doi:10.1063/1.3483133

Cited by 147 publications

(91 citation statements)

References 11 publications

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“…1 By further reducing the high-absorption ITO layer to 30-nm-thickness, they obtained room temperature continuous wave (CW) lasing. 3 This improvement indicated that reducing internal cavity losses is crucial to achieve room temperature lasing. Recently, based on free-standing GaN substrate, Cosendey et al 6 as well as Holder et al 7 reported GaN-based VCSELs lasing under pulsed electrical injection.…”

mentioning

confidence: 97%

“…As efforts have been devoted to this enterprise, lasing of electrically injected GaN-based VCSELs has been reported by several groups. [1][2][3][4][5][6][7] Lu et al announced the first electrically injected GaN-based VCSELs operating at 77 K with relatively thick ITO layer of 240 nm. 1 By further reducing the high-absorption ITO layer to 30-nm-thickness, they obtained room temperature continuous wave (CW) lasing.…”

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confidence: 98%

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Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers

Liu

Ying

et al. 2014

Applied Physics Letters

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Continuous wave (CW) lasing of electrically injected GaN-based vertical cavity surface emitting lasers (VCSELs) was achieved at room temperature. First, a high quality factor (Q) VCSEL-structured device with very narrow linewidth of 0.12 nm, corresponding to a Q-value of 3570 was obtained through two-step substrate transfer technique. However, poor heat dissipation ability prevented the device from lasing. Based on the high-Q resonant cavity design, we further fabricated vertical-structured VCSELs through metal bonding technique on Si substrate. CW lasing from vertical-structured VCSELs was observed with threshold current of density of 1.2 kA/cm2 and lasing linewidth of about 0.20 nm.

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confidence: 97%

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confidence: 98%

Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers

Liu

Ying

et al. 2014

Applied Physics Letters

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“…[14][15][16][17][18][19][20][21][22] The operating wavelength band of VCSELs is now from blue to mid-infrared. [23][24][25] The research history and references on VCSELs in wide spectral regions can be found in Refs. 1-3. In recent years, a high-speed and low-power consumption light source has been a key device for optical interconnects in data centers and supercomputers.…”

Section: Introductionmentioning

confidence: 99%

Advances and new functions of VCSEL photonics

Koyama

2014

OPT REV

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A vertical cavity surface emitting laser (VCSEL) was born in Japan. The 37 years' research and developments opened up various applications including datacom, sensors, optical interconnects, spectroscopy, optical storages, printers, laser displays, laser radar, atomic clock and high power sources. A lot of unique features have been already proven, such as low power consumption, a wafer level testing and so on. The market of VCSELs has been growing up rapidly and they are now key devices in local area networks based on multi-mode optical fibers. Optical interconnections in data centers and supercomputers are attracting much interest. In this paper, the advances on VCSEL photonics will be reviewed. We present the high-speed modulation of VCSELs based on a coupled cavity structure. For further increase in transmission capacity per fiber, the wavelength engineering of VCSEL arrays is discussed, which includes the wavelength stabilization and wavelength tuning based on a micro-machined cantilever structure. We also address a lateral integration platform and new functions, including high-resolution beam scanner, vortex beam creation and large-port free space wavelength selective switch with a Bragg reflector waveguide.

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“…[34][35][36][37][38][39][40] The later consists of growing the n-side DBR (n-DBR) epitaxially, while dielectric layers are deposited for the p-side DBR (p-DBR). Dual dielectric DBR VCSELs, on the other hand, have dielectric n-DBRs and p-DBRs.…”

Section: Motivation For Iii-nitride Tunnel Junction Intracavity Contactsmentioning

confidence: 99%

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

et al. 2016

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We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 µm aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of ~550 µW with a threshold current density of ~3.5 kA/cm 2 , while the ITO VCSELs show peak powers of ~80 µW and threshold current densities of ~7 kA/cm 2 .

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Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

Cited by 147 publications

References 11 publications

Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers

Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers

Advances and new functions of VCSEL photonics

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

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