Continuous-wave THz generation from ingaas-based photomixers pumped by a tunable dual-wavelength DFB laser

Shin, Jae–Heon; Kim, Namje; Lee, Chul Wook; Sim, Eundeok; Park, Kyung Hyun; Yee, Dae-Su; Jeon, Min Yong; Kim, Jun Oh; Jang, Y. D.; Kim, Young-Chan; Lee, Sang Jun; Noh, Sam Kyu

doi:10.1109/icimw.2009.5325661

Cited by 1 publication

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Under specific processing conditions, ultrafast photoconductive properties are achieved in bulk semiconductor materials, such as ternary In 0.53 Ga 0.47 As/InP and quaternary In 0.61 Ga 0.39 As 0.87 P 0.13 /InP heterostructures, following ion implantation with Fe ions and rapid thermal annealing (RTA) . These Fe‐implanted small gap materials were developed to build photoconductive emitters and detectors for novel terahertz spectrometer systems working at 1550 nm, the operating wavelength of practical designs integrating an erbium‐doped femtosecond fiber laser . For emitter devices, broadband terahertz emission can be produced at the picosecond timescale via photo‐induced conductivity transients when a region of the heterostructure, located between externally biased electrodes, is illuminated by short pulses.…”

Section: Introductionmentioning

confidence: 99%

Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure

Fekecs

Korinek

Chicoine

et al. 2015

Phys. Status Solidi A

View full text Add to dashboard Cite

Through the recrystallization of an amorphous heterostructure, obtained by MeV Fe ion implantation, we are able to tailor a standard epitaxial semiconductor material, a small gap InGaAsP/InP alloy, for photoconductive terahertz optoelectronics. Here, we report on microstructural changes occurring in the material over a broad range of rapid thermal annealing temperatures, using X‐ray diffraction line profile analysis and transmission electron microscopy. Results show a complete amorphous transition of the heterostructure after multiple‐energy implantations done at 83 K. Upon thermal annealing, multiple structural layers develop via solid phase epitaxy and solid phase recrystallization. The photoconductive InGaAsP layer becomes polycrystalline and submicron grained, with high crystalline volume fraction and apparent ⟨110⟩ texture. Many grains are elongated and internally faulted, with high densities of planar faults occurring on closed‐packed (111) planes. The X‐ray diffraction line broadening is anisotropic and evolves with rapid thermal annealing temperatures. At 500 °C, the X‐ray coherent domain size estimate of 10 nm is aligned reasonably with electron microscopy made in faulted areas. Above 500 °C, a significant decrease of the planar fault density is detected. We discuss the influence of these microstructural changes happening with recrystallization temperatures on the ultrafast photoconductive response of Fe‐implanted InGaAsP/InP.

show abstract

Section: Introductionmentioning

confidence: 99%