Continuous wavelength tuning from 3.9–12 µm from an optical parametric oscillator based on orientation-patterned GaP grown on GaAs

Abstract

We report for the first time nonlinear frequency conversion—specifically optical parametric oscillation—in OP-GaP layers grown by hydride vapor-phase epitaxy on 3-inch OP-GaAs templates. Continuous tuning with wavelength coverage from 3.9–12 µm was achieved by using stepped and fan-out gratings having periods from 18.0–35.2 µm, which propagated 150 µm of a 1.2-mm-thick layer before overgrowth. Anti-reflection-coated OP-GaP crystals were pumped at 1040 nm with an ultrafast Yb-fiber laser, yielding idler output powers up to 150 mW (60 mW) in spectra centered at a wavelength of 5.6 µm (10.7 µm).

Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths

“…All approaches rely on the fabrication of a seed layer, wherein the orientation-reversal pattern is defined. The first consists in using an OP-GaAs seed, − the fabrication of which is technologically mature. In the other two approaches the seed is fabricated using bulk GaP.…”

“…the ratio between the duty cycle on the surface of the OP-GaP crystal with respect to the duty cycle originally defined in the seed layer. Among the three approaches mentioned above, the highest domain fidelity was demonstrated in OP-GaP fabricated on OP-GaAs seeds . Nevertheless, efficient nonlinear conversion processes were only observed in bulk OP-GaP crystals grown by hydrid vapour phase epitaxy (HVPE) for free space quasi-phase matched conversion .…”

“…Among the three approaches mentioned above, the highest domain fidelity was demonstrated in OP-GaP fabricated on OP-GaAs seeds. 12 Nevertheless, efficient nonlinear conversion processes were only observed in bulk OP-GaP crystals grown by hydrid vapour phase epitaxy (HVPE) for free space quasi-phase matched conversion. 18 To the best of our knowledge, the only result published on OP-GaP waveguides was based on Si orientation-reversed seeds with limited domain fidelity and dealt with parametric fluorescence.…”

Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

“…The first consists in using an OP-GaAs seed [9][10][11] , the fabrication of which is technologically mature. In the other two approaches the seed is fabricated using bulk GaP.…”

“…the ratio between the duty cycle on the surface of the OP-GaP crystal with respect to the duty cycle originally defined in the seed layer. Among the three approaches mentioned above, the highest domain fidelity was demonstrated in OP-GaP fabricated on OP-GaAs seeds 9 . Nevertheless, efficient nonlinear conversion processes were only observed in bulk OP-GaP crystals grown by hydrid vapour phase epitaxy (HVPE) for free space quasi-phase matched conversion 15 .…”