Continuum based modeling of silicon integrated circuit processing: An object oriented approach

3-D analysis of semiconductor dopant distributions in a patterned structure using LEAP

“…The TEM sample was imaged in bright field along the /1 1 0S zone axis using a JEOL 2010F HRTEM. For additional comparison, the 3-D process simulator FLOOPS [6] was also used to simulate the implant and diffusion processes in the experimental structure. Accurate structural geometry with a slight recess outside the gate edge was input into FLOOPS.…”

Atomistic analysis of B clustering and mobility degradation in highly B‐doped junctions

“…In continuum process simulators or partial differential equation (PDE) solvers, the physics of the system is formulated as a series of differential equations for each particle type. Typically they are continuity equations, where each particle gain or loss is formulated in terms of its generation and recombination rates and the diffusion flux [13,14]. The reaction rates are defined according to the parameters that characterize their interactions.…”

“…The use of a very refined grid and the addition of new equations slow down the resolution of the problem using continuum methods. Then, atomistic simulation techniques, which traditionally have been just used to extract continuum model parameters, become a good alternative even for industrial applications [1,3,[9][10][11][13][14][15].…”

“…On the other hand, KMC codes allow the simulation of the annealing step by only handling dopant atoms and lattice defects and their interactions [1,3,[9][10][11][13][14][15]. Parameters that define these interactions, such as diffusivities, binding energies, capture radius, etc., must be specified.…”

Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

“…In this type of simulators the physics of the system is formulated as a series of differential equations for each particle type considered to be relevant in the process. Typically they are continuity equations, where each particle gain or loss is formulated in terms of its generation and recombination rates and the diffusion flux [3,4]. The reaction rates are defined according to the parameters that characterize their interactions.…”