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Ultrathin silicon nitride films prepared by combining rapid thermal nitridation with lowpressure chemical vapor deposition Appl.Stability of hydrogen in silicon nitride films deposited by lowpressure and plasma enhanced chemical vapor deposition techniques J. Vac. Sci. Technol. B 7, 150 (1989); 10.1116/1.584707Hopping conduction in undoped lowpressure chemically vapor deposited polycrystalline silicon films in relation to the film deposition conditionsThe effect of stress in silicon nitride films, deposited by the low-pressure chemical vapor deposition process, on the point defect concentrations in silicon has been studied. The stress level in the nitride film is varied by controlling the ratio offiow rates of reactant gases R = fSiII,ClJfNH" from 1/6 to 6. The stress in the nitride film is tensile and its magnitude increases with decreasing R. During anneals at 1100 °C in Ar with a high stress in the nitride, phosphorus diffusion in silicon is retarded, antimony diffusion is enhanced, and extrinsic stacking faults shrink faster than with a low stress. These results suggest that a vacancy supersaturation and a self-interstitia! undersaturation exist under the nitride and that the deviation from the equilibrium point defect concentrations are closely related to the stress level in the silicon nitride film. From the phosphorus junction profiles with varying shape width, an effective vacancy diffusivity of 3 X 10 -10 eml/s has been obtained.

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