Kinetics of Shallow Junction Activation: Physical Mechanisms

Kennel, H. W.; Giles, M.D.; Diebel, Milan; Keys, P.; Hwang, Jihwan; Govindaraju, Sridhar; Liu, M.; Budrevich, A.

doi:10.1109/rtp.2006.367986

Cited by 18 publications

(14 citation statements)

References 25 publications

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“…after few seconds anneal at low temperature) of boron and Si interstitials co-precipitation and are known as "large" boron interstitial clusters (BICs). In contrast, the much shorter duration time of excimer laser annealing (<200 ns) is comparable to that of some basic point-defect related phenomena, such as Si interstitial diffusion and clustering 11 , which makes the defect-formation mechanism itself questionable in this annealing regime. In addition, most of the existing studies of defect formation in laser annealed silicon have been carried out in preamorphised structures: (i) after non-melt anneals, conventional endof-range defects ({311} defects and {111} DLs) have been observed [12][13][14] ; (ii) in the case of melt laser annealing, the defects nature depends on the position of the melt front with respect to the amorphous/crystalline, a/c, interface (stacking faults are observed in the case of incomplete melting of the preamorphised layer, 15 defect-free crystalline silicon is found when melting goes beyond the a/c interface 16 ).…”

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confidence: 99%

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Qiu

Cristiano

Huet³

et al. 2014

Nano Lett.

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Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron and silicon implanted silicon samples, the most stable form among the observed defects is that of dislocation loops lying close to (001) and with Burgers vector parallel to the [001] direction, instead of conventional {111} dislocation loops or {311} rod-like defects, which are known to be more energetically favorable and are typically observed in ion implanted silicon. The observed results are explained in terms of a possible modification of the defect formation energy induced by the compressive stress developed in the nonmelted regions during laser annealing.

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confidence: 99%

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Qiu

Cristiano

Huet³

et al. 2014

Nano Lett.

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“…5 (b)), but the oscillation amplitude is considerably less the absolute temperature of the oscillator"s elements. Hence, an analysis of the system behavior can be carried out at certain points by performing the linearization of the set of the equations (1) - (2). There is a need to find coordinates of the TT .…”

Section: T T T T T H T T H T T Dtmentioning

confidence: 99%

“…The time necessity to reach steady state of heat exchange between the wafer and the elements of the thermal chamber is limited from 5 to 10 min in dependence on the heater temperature. However, the duration of the rapid thermal processes in micro and nanoelectronics processing, for which, as assumed, this effect can be used, lies in the from 10 -4 to 10 2 s at present [2][3] . That is, they run in known to be nonstationary conditions and it is important to understand how the bistability effect is revealed in dynamical regime when the bistability system is switched from one stable state to another one.…”

Section: Introductionmentioning

confidence: 99%

Temperature oscillations in a silicon wafer under constant power of incoherent irradiation by heating lamps in a thermal chamber of RTP set up

et al. 2013

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In a silicon wafer, temperature oscillations observed in a thermal chamber of the rapid thermal annealing set up are investigated in the conditions corresponding to a bistable behavior of a wafer. Oscillations with a typical period near ~400 s are observed at temperatures corresponding to the unstable branch of the s-shaped transfer characteristic of the wafer. Temperature behavior of the wafer at the different regimes of heat exchange is analyzed and it is shown that the oscillations depend on the availability of the negative feedback between the wafer and water-cooled pedestal, through which the heat output is released from the wafer. Oscillation excitation mechanism in such a heat system is offered and the theoretic model of the oscillations is derived. Estimations of the oscillation period obtained by the use of the theoretical model fall in the range between 10 3 and 10 4 s.

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“…However, the ongoing downscaling of planar silicon (Si) has becoming more difficultdue to the physical limitation issues.One of the severe problems is the short channel effects (SCE) that occur when the channel length is shortened.This problem will reduce the device threshold voltage and subsequently increase the leakage current [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…Formation of highly doped and activated shallow p + /n junction for source/drain extension (SDE) region is considered as one of the promising methods for suppressing this problem [2,3]. The simplest way for forming shallow junction in Si is by using the combination of the low-energy ion implantation and rapid thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

Aid

Hamzah

Ambran

et al. 2015

MATEC Web of Conferences

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Abstract. Shallow p+/njunctions were formed using Ge-PAI and low-energy/high-dose boron-ion implantation, followed by thermal annealing involving nanosecondnon-melt excimer laser annealingandrapidthermal annealing. The effect of laser pulse number on dopant activation and regrowth of a-Si layer are discussed.We found that laser annealing aloneis insufficient to regrow a-Si layer and activate dopant. In contrast, activationwas observed in the samples that were subjected to preannealingrapid thermal annealing followed by non-melt laser annealing; with slight increase of sheet resistance valuewhen the number of laser pulse shot was increased. This is considered due to the interaction of dopant and supersaturated defect in the remaining a-Si layer.The percentage of defect-dopant interaction increased with the pulse shot numbers which contributed to the decrease in activation level.

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Kinetics of Shallow Junction Activation: Physical Mechanisms

Cited by 18 publications

References 25 publications

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Temperature oscillations in a silicon wafer under constant power of incoherent irradiation by heating lamps in a thermal chamber of RTP set up

Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing

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