This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO x -2nm InP) in the In 0.7 Ga 0.3 As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (t OXE ) and low gate leakage (J G ) and (ii) effective carrier confinement and high effective carrier velocity (V eff ) in the QW channel. The L G =75nm In 0.7 Ga 0.3 As QWFET on Si with this composite high-K gate stack achieves high transconductance of 1750μS/μm and high drive current of 0.49mA/μm at V DS =0.5V.

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We are especially grateful to Walter Short who first envisioned and developed the WinDS and ReEDS models. We also thank the NREL analysts who provided input on the technology costs, assumptions, and methodologies in ReEDS, including

Abstract-Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily doped regions. With the correct lasing and implant conditions, the process can be used to form ultrashallow, heavily doped junctions in boron-implanted silicon. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rate greater than 10 C/s. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, nonamorphizing boron implants at a dose of 10 ions/cm and energies of 5 KeV and 1 KeV are annealed with a 308-nm excimer laser. Subsequent rapid thermal anneals are used to study the effect of laser annealing as a pretreatment. SIMS, sheet resistance and mobility data have been measured for all annealing and implant conditions. For the 5-KeV implants, the 308-nm nonmelt laser preanneal results in increased diffusion. However, for the 1-KeV implant processed with ten laser pulses, the SIMS profile shows that no measurable diffusion has occurred, yet a sheet resistance of 420 /sq was produced.

This paper reports on boron and arsenic redistribution during the TiSi2 self-aligned silicide process as applied to shallow (<0.2 ~tm) junctions. Dopant loss was seen to occur through evaporation from the silicide surface, segregation into the Ti-rich outer layer which is subsequently removed, and diffusion into the silicide layer. Depending on the silicide and junction annealing temperatures, up to 99% of the implanted dopant dose can be lost via these three mechanisms. Dopant loss is particularly acute when the silicide is formed concurrently with recrystallization/annealing of the junction implant, before the dopant diffuses into the silicon. Germanium preamorphization, to eliminate channeling of the ion implanted dopants, further aggravates the loss of boron but has a slightly beneficial effect with arsenic. Oxide capping of the silicide before annealing reduces dopant evaporation and increases the dopant concentration at the silicide contact, but at the expense of increased junction depth. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.69.4.4 Downloaded on 2015-06-04 to IP