Advanced high-K gate dielectric for high-performance short-channel In&lt;inf&gt;0.7&lt;/inf&gt;Ga&lt;inf&gt;0.3&lt;/inf&gt;As quantum well field effect transistors on silicon substrate for low power logic applications

Radosavljević, M.; Chu-Kung, B.; Corcoran, Sean; Dewey, G.; Hudait, Mantu K.; Fastenau, J. M.; Kavalieros, J.; Liu, W. K.; Lubyshev, D.; Metz, M.; Millard, Kimberly A.; Mukherjee, Niloy; Rachmady, W.; Shah, Uday; Chau, R.

doi:10.1109/iedm.2009.5424361

Cited by 174 publications

(161 citation statements)

References 1 publication

Supporting

Mentioning

156

Contrasting

Order By: Relevance

“…40 Another approach using InP as a barrier layer, in what is known as a "buried-channel" design, has also yielded good MOSFET performance, but is limited in terms of EOT scalability. 59 A further challenge is to maintain the high electron mobility of InGaAs in MOS structures with scaled gate stacks because of Coulomb scattering, interface roughness scattering, and remote phonon scattering, which can severely degrade the mobility.…”

Section: The Dielectric/iii-v Semiconductor Interfacementioning

confidence: 99%

III–V compound semiconductor transistors—from planar to nanowire structures

et al. 2014

View full text Add to dashboard Cite

show abstract

Section: The Dielectric/iii-v Semiconductor Interfacementioning

confidence: 99%

III–V compound semiconductor transistors—from planar to nanowire structures

et al. 2014

View full text Add to dashboard Cite

show abstract

“…[12][13][14] InGaAs is widely studied as the channel material in these devices due to its low effective electron mass and high electron mobility. In 0.52 Al 0.48 As, which is lattice matched to In 0.53 Ga 0.47 As, has a higher conduction band offset with an InGaAs channel compared to using an InP barrier layer, and so offers the potential of improved confinement of electrons in the channel.…”

Section: Introductionmentioning

confidence: 99%

Chemical and electrical characterization of the HfO2/InAlAs interface

Brennan

Galatage

Thomas

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large D-it response in electrical measurements. (C) 2013 AIP Publishing LLC

show abstract

“…1 Recently, III-V compound semiconductors, namely, InGaAs, InAs, InSb, and InAsSb, [2][3][4][5][6][7][8] coupled with high-j gate dielectrics have been investigated for n-channel field-effect transistors. However, the demonstration of equivalent high-performance p-channel transistor is mandatory to realize energy-efficient CMOS logic.…”

Section: Introductionmentioning

confidence: 99%

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Hudait

Zhu

Maurya

et al. 2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Structural and band alignment properties of atomic layer Al2O3 oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al2O3 film and the Ge epilayer. The extracted valence band offset, ΔEv, values of Al2O3 relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in ΔEv related to the crystallographic orientation were ΔEV(110)Ge>ΔEV(100)Ge≥ΔEV(111)Ge and the conduction band offset, ΔEc, related to the crystallographic orientation was ΔEc(111)Ge>ΔEc(110)Ge>ΔEc(100)Ge using the measured ΔEv, bandgap of Al2O3 in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

show abstract

Advanced high-K gate dielectric for high-performance short-channel In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum well field effect transistors on silicon substrate for low power logic applications

Cited by 174 publications

References 1 publication

III–V compound semiconductor transistors—from planar to nanowire structures

III–V compound semiconductor transistors—from planar to nanowire structures

Chemical and electrical characterization of the HfO2/InAlAs interface

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Contact Info

Product

Resources

About