Contrast enhancement pattern transfer etching of phosphorus-doped polycrystalline silicon

Hayasaka, N.; Nakahara, H.; Okano, Haruo; Horiike, Yasuhiro

doi:10.1063/1.98668

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Polyimide Ablation1

Introduction1

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1987

2010

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Cited by 3 publications

(2 citation statements)

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“…Silicon Etching [5) Phosphorous doped N-type silicon (-5 x 10(15)/cc) was stripped of its oxide by dipping in a buffered HF solution for 20 sec prior to placing in the vacuum cell.…”

Section: Polyimide Ablationmentioning

confidence: 99%

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Excimer Laser Induced Micron-Size Pattern Etching By Image Projection

Brannon

1987

MRS Proc.

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Patterned fine-line features as small as 0.8 microns have been etched in polyimide, silicon, and copper by use of ablative and chemical techniques. KrF excimer laser pattern etching was accomplished by use of a Kohler-type projection system employing a Uv refracting microscope objective. Ablative etching of polyimide was accomplished in air, while silicon and copper were chemically etched using the vapor of chlorine or carbon tetrachloride.

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“…Silicon Etching [5) Phosphorous doped N-type silicon (-5 x 10(15)/cc) was stripped of its oxide by dipping in a buffered HF solution for 20 sec prior to placing in the vacuum cell.…”

Section: Polyimide Ablationmentioning

confidence: 99%

“…While most of the recent activity in excimer laser exposure instruments has been for photolithographic applications [1,2], reports dealing with projection etching have appeared [3,4,5].…”

Section: Introductionmentioning

confidence: 99%