Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate

Zhao, Tianchen; Yuan, Ju Long; Deng, Qian Fa; Feng, Kaiping; Zhou, Zhongmin; Wang, Xu

doi:10.3390/app9183704

Cited by 9 publications

(5 citation statements)

References 20 publications

(19 reference statements)

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“…Due to the excellent material properties such as high hardness, good light transmittance, high chemical and thermal stability, sapphire has been widely used in high-end technical fields such as communications, electronics, aerospace, optics, and biological engineering [1][2][3][4][5][6]. As a typical anisotropic material, sapphire (α-Al 2 O 3 ) with different crystal planes has different mechanical and optical properties [7].…”

Section: Introductionmentioning

confidence: 99%

Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

et al. 2020

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Sapphire has been the most widely used substrate material in LEDs, and the demand for non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M- and R-plane were selected as the research objects. Nanoindentation technology and chemical mechanical polishing technology were used to study the effect of anisotropy on material properties and processing results. The consequence showed that the C-plane was the easiest crystal plane to process with the material removal rate of 5.93 nm/min, while the R-plane was the most difficult with the material removal rate of 2.47 nm/min. Moreover, the research results have great guiding significance for the processing of sapphire with different crystal orientations.

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Section: Introductionmentioning

confidence: 99%

Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

et al. 2020

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“…Therefore, the residence time of the polishing slurry in the processing area is extended, the distribution uniformity of the polishing slurry in the processing area is improved, the polishing efficiency and quality are improved, and high-efficiency and high-quality polishing is realized. Figure 2 shows the upward displacement of the polishing slurry by DEP force in a non-uniform electric field [28].…”

Section: Dielectrophoresis Polishing Methodsmentioning

confidence: 99%

Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer

et al. 2020

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Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached Ra 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer.

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“…Diamond crystallites are faceted and ballas shaped with wide use in flat panel displays and wear resistance applications. Typically, r-sapphire has been a promising candidate because of <100> growth needed for device fabrication [21][22][23]. Therefore, the synthesis and ability to selectively tune between these diamond and Q-carbon structures, with tailored geometry in the form of thin films (2D) and nanoballs (3D) on r-sapphire, will open doors for exciting frontiers in quantum computing [24], nanosensing, field-emission, target drug delivery, and novel solid-state devices [25].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Q-Carbon Nanostructures, Diamond and Their Composites with Wafer-Scale Integration

Khosla

Narayan

2022

Crystals

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We report the formation of Q-carbon nanolayers, Q-carbon nanoballs, nanodiamonds, microdiamonds, and their composites by controlling laser and substrate variables. The choice of these parameters is guided by the SLIM (simulation of laser interactions with materials) computer modeling. For a constant film thickness and initial sp3 content, we obtain different microstructures with increasing pulse energy density as a result of different quenching rate and undercooling. This is related to decreasing undercooling with increasing pulse energy density. The structure of thin film Q-carbon evolves into Q-carbon nanoballs with the increase in laser annealing energy density. These Q-carbon nanoballs interestingly self-organize in the form of rings with embedded nanodiamonds to form Q-carbon nanoballs/diamond composites. We form high quality, epitaxial nano, and micro diamond films at a higher energy density and discuss a model showing undercooling and quenching rate generating a pressure pulse, which may play a critical role in a direct conversion of amorphous carbon into Q-carbon or diamond or their composites. This ability to selectively tune between diamond or Q-carbon or their composites on a single substrate is highly desirable for a variety of applications ranging from protective coatings to nanosensing and field emission to targeted drug delivery. Furthermore, Q-carbon nanoballs and nanodiamonds are utilized as seeds to grow microdiamond films by HFCVD. It is observed that the Q-carbon nanoballs contain diamond nuclei of critical size, which provide available nucleation sites for diamond growth, leading to stress-free, adherent, and denser films, which are needed for a variety of coating applications.

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Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate

Cited by 9 publications

References 20 publications

Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer

Fabrication of Q-Carbon Nanostructures, Diamond and Their Composites with Wafer-Scale Integration

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