Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon

Dislocation related luminescence (DRL) in Si was analyzed using time‐resolved techniques. A set of samples exhibiting different spectral features in the range of the D1 band was prepared by plastic deformation and subsequent thermal treatment. For all samples the sequence of time constants texc < tD4 < tD1 < tD2 has been observed where texc, tD4, tD1, and tD2 denote the time decay constants for the TO phonon replica of the Si bound exciton (TO BE) and D4, D1, and D2 DRL bands, respectively. It should be noted that the relation between decay times of the D1 and D2 bands remained same for all sub‐bands in the D1 family. Our results imply that transitions of similar nature are responsible for the bands. On the other hand, the lack of correlation between D1/D2 decay times and contamination levels suggests that intrinsic properties of dislocations are responsible for the corresponding transitions. We analyzed this observation in comparison with previous results and propose a model of recombination between two shallow and one deep level for D1/D2 bands. Differences in decay times are attributed to different spatial separation of shallow traps from a common deep trap. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 90%

Time‐resolved measurements of dislocation‐related photoluminescence bands in silicon

Steinman¹,

Kenyon

Tereshchenko

2009

“…The oxygen gettering in the A-type samples was simulated based on the model of randomly distributed dislocation traces [7,8], which were considered as perfect oxygen traps. We have found that the kinetics is strongly non-exponential in this case (at least until oxygen concentration is above 10% of the initial value).…”

Section: Ageing Kinetics It Is Found That All Samples Of the Same Typmentioning

confidence: 99%

“…• C [7] and can be revealed by their recombination activity even in the samples with individual dislocations [8]. These defects could also be assumed to serve as centers for oxygen aggregation.…”

mentioning

confidence: 99%

Oxygen gettering at defects introduced by plastic deformation in silicon

Yarykin

Hieckmann

Vdovin

2007

Self Cite

Decay of the supersaturated oxygen solid solution during annealing at 500–800 °C is studied in plastically deformed silicon crystals. The plastic deformation up to 4–5% is found to significantly increase the rate of the decay. In the samples deformed at 700 °C the decay is governed by the oxygen diffusion not to dislocations but to other defects created during deformation. These defects are recovered due to the short annealing at 1150 °C. In the annealed samples the decay of oxygen solution is determined by the oxygen diffusion to dislocations. In both cases the activation energy of oxygen transport in the temperature range (500–700) °C is about 1.5 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

“…Moreover, in Si with a low dislocation density deformed at low temperatures the effect of deformation-induced defects on the electrical properties is mainly determined not by dislocations themselves but by the dislocation trails [3,4]. It was shown [4] that the EBIC contrast of dislocation trails was rather high even in crystals deformed in clean conditions, in which the dislocation EBIC contrast practically disappeared.…”

mentioning

confidence: 99%

Effect of dislocation trails on gold diffusion in Si

Feklisova

Yakimov

2009

Gold diffusion in plastically deformed Si containing dislocation trails has been carried out at temperatures 700 and 750 °C. The substitutional gold depth profile has been studied by successive sample etching and DLTS profiling. It is observed that the gold concentration in plastically deformed Si is about 10 times higher than that in defect‐free Si. Moreover, it is at least 10 times higher than that estimated for the dislocation density revealed in the samples under study. It is concluded that the observed increase in the substitutional gold concentration is associated with defects in the dislocation trails formed behind moving dislocations. It is assumed that both sinks for self‐interstitials and traps for interstitial gold present in the samples under study. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)