Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si

In situ measurement of adsorbed nitrogen atoms for PA‐MBE growth of group III nitrides on Si

“…The production of the chemically active nitrogen atoms N+N* was performed by IRFS-501RF nitrogen radical source made by Arios Inc. under the discharge condition of 1.38 sccm and up to 500 W of HB mode [4][5][6][7][8]. In situ measurement of ADS N+N* atoms was performed in a VG80H MBE growth chamber or a chamber for specially designed measurement chamber [6].…”

“…As N+N* atoms have long life time and they are also active as ADS atoms during discharge for indirect irradiation at the behind of the shutter or a remote plasma position in a growth chamber. In situ measurement of ADS nitrogen atoms is available to use the self ionization of ADS nitrogen atoms on a negatively biased electrode using a parallel plate electrodes [7] and a spiral mesh electrode [8].…”

N-polar AlN thin layers grown on Si(111) by plasma-assisted MBE

“…4, the growth rate increases almost linearly with RF power up to 300 W and tends to saturation in the range of 350-450 W. Since the concentration of the (N + N + ) atoms linearly increases with RF power, the observed dependence can be explained as follows. 18) At low RF power, the amount of chemically active nitrogen atoms is less than that of Al (V/III ratio < 1), and therefore, the growth rate linearly scales with increasing of RF power. At high RF power, the V/III ratio is close to unity and hence, the growth rate saturates.…”