2012
DOI: 10.1088/0960-1317/22/6/065028
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Control of buckling in large micromembranes using engineered support structures

Abstract: In this paper we describe a general method to avoid stress-induced buckling of thin and large freestanding membranes. We show that using properly designed supports, in the form of nanobeams, it is possible to reduce the out-of-plane deflection of the membrane while maintaining its stiffness. As a proof of principle, using silicon-on-insulator (SOI) platform, we realized 30-µm-wide, 220-nm-thick, free-standing Si membranes, supported by four 15-µm-long and 3-µm-wide nanobeams. Using our approach, we were able t… Show more

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Cited by 44 publications
(48 citation statements)
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“…This is an issue which has been observed in most double-membrane MOEMS and which does not allow to predict the initial coupling strength and the wavelength of the modes. Techniques to control the buckling should therefore be investigated to improve the repeatibility of devices [43]. The Q factor is of both modes is not as high as expected from simulations.…”
Section: A Ingaasp/inp Devicesmentioning
confidence: 99%
See 1 more Smart Citation
“…This is an issue which has been observed in most double-membrane MOEMS and which does not allow to predict the initial coupling strength and the wavelength of the modes. Techniques to control the buckling should therefore be investigated to improve the repeatibility of devices [43]. The Q factor is of both modes is not as high as expected from simulations.…”
Section: A Ingaasp/inp Devicesmentioning
confidence: 99%
“…Critical point drying would be advantageous to completely eliminate the capillary forces and to reach an optimum design. In this case, however, a more accurate model is needed to keep into account the effects of strain and techniques to control buckling should be implemented [43]. To be on the safe side, conservative values of t = 180 nm and z 0 = 240 nm have been chosen for InP devices and t = 160 nm and z 0 = 200 nm for GaAs (red boxes in Fig.…”
Section: B Device Geometry Designmentioning
confidence: 99%
“…The area of the bridge (14x8 µm 2 ) ensures a sufficient in-plane confinement around the cavity defect. Additional external trenches are patterned close to the supporting arms to release any internal stress accumulated during the fabrication process and to avoid buckling of the structure 22 .…”
Section: Introductionmentioning
confidence: 99%
“…Fabrication of such membranes has been successful in metallic systems, 6,7 but has proven challenging in semiconductors like silicon. Freestanding silicon membranes have applications in electronic and photonic materials, [8][9][10][11] micromechanical devices, [12][13][14][15][16] x-ray optics, [17][18][19] macromolecular filters, 20 lithographic templates, 17,19 as sensors, 21,22 and as low-absorption supports in transmission electron microscopy. All of these applications benefit from flat crystalline structures with low lateral inhomogeneity.…”
mentioning
confidence: 99%