Control of carbon in Czochralski silicon crystals

Series, R.W.; Barraclough, K.G.

doi:10.1016/0022-0248(83)90453-0

Cited by 14 publications

(11 citation statements)

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“…Several reasons for appearance of CO in the growth atmosphere were suggested in [9][10][11]. It could originate from poly-crystalline Si starting material, dissolved parts of the carbon crucible, and residual gasses of the heated graphite.…”

Section: Crucible Choicementioning

confidence: 99%

Silicon crystal fibers: difficulties and progress

Alshourbagy¹,

Toncelli

Tonelli

et al. 2007

Cryst. Res. Technol.

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In this work difficulties and the progress in growing Silicon fibers by µ-PD technique have been reported. Some main instability growth problems have been solved. Smooth temperature gradient is obtained for longer distance in and under the hot zone part by making an effective change in our hot zone. Also we obtained temperature stabilization as good as 0.2 K. The level of impurities was minimized by using etching and baking processes.

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Section: Crucible Choicementioning

confidence: 99%

Silicon crystal fibers: difficulties and progress

Alshourbagy¹,

Toncelli

Tonelli

et al. 2007

Cryst. Res. Technol.

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“…It has been demonstrated experimentally [5] that the concentration of gaseous CO in a furnace chamber containing graphite components increases considerably during the melting process. Moreover, measurements of the C contents in the melt and in the resulting crystal have shown that contamination of the melt mostly occurs prior to the crystal growth stage [7]. Therefore, the dynamics of C contamination and the generation of SiC during the melting process need to be understood for controlling impurities in CZ-Si crystal growth.…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Liu

Gao

Nakano

et al. 2015

Crystal Research and Technology

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Carbon contamination in single crystalline silicon is detrimental to the minority carrier lifetime, one of the critical parameters for electronic wafers. In order to study the generation and accumulation of carbon contamination, transient global modeling of heat and mass transport was performed for the melting process of the Czochralski silicon crystal growth. Carbon contamination, caused by the presence of carbon monoxide in argon gas and silicon carbide in the silicon feedstock, was predicted by the fully coupled chemical model; the model included six reactions taking place in the chamber. A simplified model for silicon carbide generation by the reaction between carbon monoxide and solid silicon was proposed using the closest packing assumption for the blocky silicon feedstock. The accumulation of carbon in the melted silicon feedstock during the melting and stabilization stages was predicted. Owing to this initial carbon content in the melt, controlling carbon contamination before the growth stage becomes crucial for reducing the carbon incorporation in a growing crystal.

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“…Therefore, understanding the C transport mechanism and developing methods for reducing C contamination during the growth of Si crystals is important for fabricating wafers and devices. The incorporation of C from the gas/Si interface occurs before the growth stage and continues until the tailing stage of the crystallization process . The accumulation of C in the Si feedstock during the melting process depends on the back diffusion of CO that is continuously generated from the graphite elements at high temperature .…”

Section: Introductionmentioning

confidence: 99%

“…The presence of C in the melt and in the resulting crystal is strongly correlated with the concentration of gaseous CO in the chamber . The measurements of C in the melt and in the crystal also revealed that most contamination of the melt occurs before the crystal growth stage . Thus, the prerequisite for controlling impurity transport is an understanding of Ar gas flow and melt convection.…”

Section: Introductionmentioning

confidence: 99%

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Development of carbon transport and modeling in Czochralski silicon crystal growth

Liu

Nakano

Kakimoto

2016

Crystal Research and Technology

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In Czochralski silicon (CZ-Si) crystal growth, species generated from high temperature reactions and transported by Si melt and argon (Ar) gas strongly affect the purity and quality of the grown crystals. The reduction of carbon (C) contamination in crystal is required for producing Si wafers with long carrier lifetimes. Advances in the modeling of C contamination in CZ-Si growth are reviewed on the basis of the mass transport phenomena in the Ar gas and Si domains. The generation, incorporation, and accumulation of C were investigated by the transient global simulations of heat and mass transport during the melting process of CZ-Si growth. In addition to graphite etching, two additional sources of carbon monoxide (CO) were analyzed according to their contributions to the accumulation of C in the Si melt. The effect of gas flow control on the back diffusion of the generated CO was examined via a parametric study of the furnace pressure and the Ar gas flow rate. Strategies for C content reduction are discussed on the basis of the mechanisms of C accumulation, which indicate that the final C content depends on both the growth duration as well as the flux of contaminants at the gas/melt interface.

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Control of carbon in Czochralski silicon crystals

Cited by 14 publications

References 1 publication

Silicon crystal fibers: difficulties and progress

Silicon crystal fibers: difficulties and progress

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

Development of carbon transport and modeling in Czochralski silicon crystal growth

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