Control of composition and structure for molybdenum nitride films synthesized using ion beam assisted deposition

Abstract

Articles you may be interested inElectron emission suppression characteristics of molybdenum grids coated with carbon film by ion beam assisted deposition Development of corrosion-resistant metal nitride coatings via ion beam assisted deposition AIP Conf. Proc. 576, 915 (2001); 10.1063/1.1395452Structural and bonding properties of carbon nitride films synthesized by low energy nitrogen-ion-beamassisted pulsed laser deposition with different laser fluences Effect of temperature on carbon nitride films synthesized by ion-beam-assisted pulsed laser depositionThe purpose of the research described in this article was to synthesize molybdenum nitride films with well-defined structures and stoichiometries using ion beam assisted deposition @AD). Approximately 400 nm thick films were prepared by the evaporative deposition of molybdenum while simultaneously bombarding the growing film with low energy (250-1000 eV) nitrogen ions. The effects of ion-to-atom arrival rate ratio, ion angle of incidence, and ion energy on the film composition and phase constituents were examined. The film nitrogen to molybdenum stoichiometry increased linearly with increasing arrival rate ratio irrespective of the ion energy and varied significantly with changes in the ion angle of incidence. The latter was interpreted based on sputtering and reflection effects. The phase constituents were functions of all of the deposition parameters investigated. We propose that a single parameter, the effective energy density per deposited atom, can account for the effects of ion energy, mass, and angle of incidence. The effective energy density is approximately the ion energy divided by the ion range. The range incorporates the effects of ion mass and angle of incidence, as well as the energy. For low energy ions the energy density per depositing atom is proportional to E112, a dependence that it shares with other models that have been developed to account for phase formation during BAD. The advantage of the energy density treatment is that it has a more obvious influence on the temperature in the growth zone, a factor controlling phase formation. 0 1995 American Institute of Physics.5138

The impact of nitrogen content and vacancies on structure and mechanical properties of Mo–N thin films

“…6)), with ordered nitrogen vacancies has rarely been studied. 6,13,14 The Mo-N phase diagram by Jehn 13 is furthermore enriched by the ordered phase Mo 3 N 2 (similar to many other phase diagrams of nonstoichiometric transition metal nitrides and carbides after discovering their ordered phases 15 ). The ordered phase Mo 3 N 2 (which we hereafter refer to as pseudo-cubic c 0 -MoN x , because it is based on the cubicstructured c-MoN x phase, but with ordered N-vacancies) is rarely studied and was first reported by Troitskaya and Pinsker 16 and classified as an NaCl-type structure with partial occupation of both sublattices (Pm-3m).…”

Influence of substrate rotation speed on the structure and mechanical properties of nanocrystalline AlTiN/MoN coatings synthesized by cathodic arc ion-plating

“…Hard nitrides coatings of Group IVB transition metals are widely produced by PVD process and are increasingly used in a wide range of tribological applications to improve performance and extend the life of metal cutting, drilling, and forming tools, as well as bearings and various machine parts. Tribological properties of MoN [3], diffusion barrier [4], catalytic [5], superconductor properties [6], improved surface wear resistance, and self-lubrication over a wide temperature range [7,8] were published in recent years. Other nitride coatings of TiAl are well known in cutting applications to their advanced wear resistance, enhanced hardness, and superior performance under corrosive or high temperature conditions [9].…”

Ruthenium complexes as precursors for chemical vapor-deposition (CVD)

“…13 Ruthenium thin lms have also been used as seed and barrier layers for copper and silicon deposition due to its high conductivity and chemical inactivity with copper and silicon. 14 Ruthenium is a promising candidate for developing a deeper understanding of chemical vapor deposition and precursor design for catalytic lms due to much individual molecular behavior in surface science and catalysis. In early stage, ruthenium lms were prepared by different techniques such as reactive sputtering, 15 physical vapor deposition, 16 spray pyrolysis, 17 pulsed laser deposition (PLD), 18 molecular-beam epitaxy (MBE), 19 cathodic electrosynthesis 20 and by a sol-gel process.…”