Control of nitrogen flux for growth of cubic GaN on 3C-SiC/Si by RF-MBE

Ohachi, T.; Kikuchi, Toshiyuki; Miyauchi, Katsuki; Ito, Yuki; Takagi, R.; Hogiri, Masayuki; Fujita, Kazuhisa; Ariyada, Osamu; Wada, M.

doi:10.1016/j.jcrysgro.2004.11.140

Cited by 6 publications

(6 citation statements)

References 13 publications

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“…Therefore, plasma discharges are employed to produce excited nitrogen species such as nitrogen atoms (N), electrically excited nitrogen atoms (N * ), electrically excited nitrogen molecules ðN Ã 2 Þ and nitrogen ions ðN þ 2 Þ. Various techniques of plasma discharge including radio-frequency (RF) [1][2][3][4], microwave [5][6][7], electron cyclotron resonance of microwave plasma (m-ECR) [1,8,9], and DC plasma [10] have been proposed in MBE growth. Of these methods, the RF plasma method is commonly used for the MBE-growth of group III-nitride because RF plasma produces less N 2 + and more N and N * compared to m-ECR [1,11].…”

Section: Introductionmentioning

confidence: 99%

Role of excited nitrogen species in the growth of GaN by RF–MBE

Kikuchi

Somintac

Ariyada³

et al. 2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Role of excited nitrogen species in the growth of GaN by RF–MBE

Kikuchi

Somintac

Ariyada³

et al. 2006

Journal of Crystal Growth

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“…80H MBE system equipped with an RF source (Arios IRFS) [4,18]. A 2-inch BP/Si (001) substrate was prepared by Showa Denko K.K.…”

Section: Methodsmentioning

confidence: 99%

Radio‐frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero‐structure

Kikuchi

Somintac

Odawara

et al. 2006

Phys. Status Solidi (c)

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Zincblende gallium nitride (c-GaN) was grown on zincblende boron monophosphide (BP)/silicon (001) using radio-frequency plasma-assisted molecular-beam epitaxy (RF-MBE). In spite of near perfect latticematch coordination between c-GaN and BP, the initial nucleation of c-GaN was 3D island formation due to imperfect wetting. Using cross-sectional electron backscatter diffraction pattern (x-EBSD), it was found that dislocations were eliminated with an increase of epilayer thickness of c-GaN, and finally 99.4% c-GaN (001) was achieved. The (2x2) and (4x1) reconstructions of the surface of almost pure cGaN (001) were confirmed by reflection high-energy electron diffraction (RHEED) under arseniccontamination-free conditions.

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“…A highly efficient production of nitrogen atoms for MBE growth is achieved by a radio frequency inductively coupled plasma (rf-ICP) nitrogen discharge, which is the main subject of this study. The study of rf-ICP discharge was started in 1927 by Thomson 1) and several reports have been published since then, [2][3][4][5][6][7][8][9] but the mechanism of nitrogen production by rf-ICP is not fully understood yet. A highly efficient nitrogen radical production was realized using an optimum dc magnetic field for the resonance of about 0.5 mT at an electron energy of 2 eV for a 13.56 MHz discharge under the rf-electron cyclotron resonance (ECR) condition.…”

Section: Introductionmentioning

confidence: 99%

“…A highly efficient nitrogen radical production was realized using an optimum dc magnetic field for the resonance of about 0.5 mT at an electron energy of 2 eV for a 13.56 MHz discharge under the rf-electron cyclotron resonance (ECR) condition. 9) The effect of controlling the divergence of the nitrogen radical flux by changing the orifice dimension, the aspect ratio of the orifice, and the distribution of hole position was studied previously. 9) The ICP rf discharge has a transition between two discharge modes, the electrostatic (E) mode and the electromagnetic (H) mode.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux

Ohachi¹,

Yamabe²,

Wada³

et al. 2011

Jpn. J. Appl. Phys.

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A radio frequency inductively coupled plasma (rf-ICP) nitrogen discharge was investigated to improve group III nitride growth on Si substrates. Two modes of the rf-ICP discharge, low brightness (LB) and high brightness (HB) discharges, were successfully controlled through mode transition. Direct irradiation and indirect irradiation of nitrogen atoms were applied for the growth of group III nitrides. As an application of indirect irradiation of nitrogen atoms, the growth of-Si 3 N 4 using interface reaction epitaxy (IRE) was studied. As applications of direct irradiation of nitrogen atoms, activity modulation migration-enhanced epitaxy (AM-MEE) and plasma-assisted molecular beam epitaxy (PA-MBE), which are atomic layer epitaxy (ALE) methods, are demonstrated. These growth systems operate to realize a single-growth process from a Si substrate to an AlN or GaN epitaxial layer, i.e., through preparation of a double buffer (DBL) layer of AlN/-Si 3 N 4 /Si after the growth of IRE-Si 3 N 4 and IRE AlN. The electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode is demonstrated to measure in situ direct and indirect nitrogen atom fluxes during the growth.

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Control of nitrogen flux for growth of cubic GaN on 3C-SiC/Si by RF-MBE

Cited by 6 publications

References 13 publications

Role of excited nitrogen species in the growth of GaN by RF–MBE

Role of excited nitrogen species in the growth of GaN by RF–MBE

Radio‐frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero‐structure

Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux

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