Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

Jeon, Jae Kwon; Um, Jae Gwang; Lee, Suhui; Jang, Jin

doi:10.1063/1.5008435

Cited by 56 publications

(33 citation statements)

References 26 publications

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“…Compared to those of BCE1 and BCE2, the OH ratio of BCE3 is significantly higher. The OH ratio can be increased when interstitial H (Hi) combines with O, which indicates the increase of weakly bonded oxygen species [19]- [20]. Therefore, the dramatic negative Von shift of BCE3 TFT can be attributed to an increase of hydroxyl groups.…”

Section: Resultsmentioning

confidence: 99%

Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiO_x/Active Interface

Jeon

Yang

Lee

et al. 2021

IEEE Electron Device Lett.

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Section: Resultsmentioning

confidence: 99%

Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiO_x/Active Interface

Jeon

Yang

Lee

et al. 2021

IEEE Electron Device Lett.

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“…For Sn and Zn element, the peaks of Sn 3d 5/2 and Zn 2p 3/2 are about 486.60 eV and 1021.60 eV, which means the Sn and Zn element in the films are present in form of SnO 2 and ZnO [16,17]. (2) the Vo peak at 531 eV represents the oxygen vacancy; (3) the M-O-R peak at 532 eV represents the weakly bond like H 2 O, -CO 3 and -OH [18]. The proportion of sub-peak area can indicate the different bond species content.…”

Section: Resultsmentioning

confidence: 99%

“…is the O 1 s spectra of Zr-AZTO of different power combinations. The O 1 s peak can be divided into three sub-peaks: (1) the M-O-M peak at 530 eV represents the O 2− binding with Zr, Al, Sn, Zn; (2) the Vo peak at 531 eV represents the oxygen vacancy; (3) the M-O-R peak at 532 eV represents the weakly bond like H2O, -CO3 and -OH[18]. The proportion of sub-peak area can indicate the different bond species content.…”

mentioning

confidence: 99%

The Performance of Zr-Doped Al-Zn-Sn-O Thin Film Transistor Prepared by Co-Sputtering

Zhang

Liu

et al. 2019

Applied Sciences

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In this work, a thin film transistor (TFT) with Zr-doped aluminum-zinc-tin oxide (Zr-AZTO) semiconductor as active layer was investigated. The Zr-AZTO thin films were co-sputtered by ZrO2 and AZTO targets (RF-Sputter) in Ar, and annealed at 350 °C in air atmosphere. With the discharge power of AZTO increasing from 100 W to 120 W, the content of Zr element decreases from 0.63 ± 0.01 at.% to 0.34 ± 0.01 at.%, and the oxygen vacancy decreases from (19.0 ± 0.1)% to (17.3 ± 0.8)%. The results of Zr-AZTO thin film show that the main factor is the co-sputter power of ZrO2 target. With the co-sputter power of ZrO2 increasing from 15 W to 45 W, the content of Zr element increases from 0.63 ± 0.01 at.% to 2.79 ± 0.01 at.%, the content of oxygen vacancy decreases from (19.0 ± 0.1)% to (14.1 ± 0.1)%, Eg increases from 2.76 eV to 2.86 eV, and the root mean square (RMS) roughness firstly decreases from 0.402 nm to 0.387 nm and then increases to 0.490 nm. The Micro Wave Photo Conductivity Decay (μ-PCD, LTA-1620SP) was used to measure the quality of Zr-AZTO thin film and the mean peak and D value decreases from 139.3 mV to 80.9 mV and from 1.54 to 0.77 as the co-sputter power of ZrO2 increases from 15 W to 45 W, which means it has highest localized states and defects in high ZrO2 co-sputter power. The devices prepared at 15 W (ZrO2)/100 W (AZTO) co-sputter show a best performance, with a μsat of 8.0 ± 0.6 cm2/(V∙S), an Ion/Ioff of (2.01 ± 0.34) × 106, and a SS of 0.18 ± 0.03 V/dec. The device of Sample B has a 0.5 V negative shift under −20 V NBS and 9.6 V positive shift under 20 V PBS.

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“…SS is obtained from (d log (IDS)/d VGS) -1 . µLin is calculated from trans-conductance (gM) ∂IDS/∂VGS, with VDS = -1 V [9].…”

Section: Otft Characteristicsmentioning

confidence: 99%

42.2: Photolithographic Patterning of Short Channel Organic TFTs for Displays

Jeon

Choi

et al. 2018

Symp Digest of Tech Papers

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We report high‐performance organic TFTs with short channel length (L) of 6 µm. The OTFTs employ a bottom‐gate, bottom‐contact structure, with all layers patterned by conventional photolithographic methods. A field effect mobility of ∼0.45 cm2/V·s, and the on‐to‐off current ratio of ∼106 were obtained in the fabricated p‐channel OTFTs. The short channel OTFT with excellent performance is promising for flexible, high‐resolution displays.

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Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

Cited by 56 publications

References 26 publications

Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiO_x/Active Interface

Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiO_x/Active Interface

The Performance of Zr-Doped Al-Zn-Sn-O Thin Film Transistor Prepared by Co-Sputtering

42.2: Photolithographic Patterning of Short Channel Organic TFTs for Displays

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Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

Cited by 56 publications

References 26 publications

Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiOx/Active Interface

Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiOx/Active Interface

The Performance of Zr-Doped Al-Zn-Sn-O Thin Film Transistor Prepared by Co-Sputtering

42.2: Photolithographic Patterning of Short Channel Organic TFTs for Displays

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Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiO_x/Active Interface

Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiO_x/Active Interface