We report a simple method to realize stretchable oxide TFTs by selectively modifying the surface properties of PDMS elastic substrate. The devices can be stretched up to 50% with negligible degradation in the electrical performances, making it a promising approach to wearable electronics.

A new device structure of oxide thin‐film transistor (TFT) having lower overlap capacitance without scarifying the drain current is proposed. This can be used for high‐speed circuits and high frame rate displays using the conventional TFT manufacturing process. The existence of spreading currents in amorphous indium‐gallium‐zinc oxide (a‐IGZO) TFTs with stripe‐patterned source/drain (S/D) electrodes is demonstrated. The device performances of the a‐IGZO TFTs with various widths of stripe‐patterned S/D electrodes and open spaces between them are compared. The drain currents of the a‐IGZO TFTs are almost same when the width of open space changes from 0 to 10 µm because of the existence of spreading currents. The overlap capacitance between gate and S/D of the a‐IGZO TFTs can be significantly reduced without scarifying drain currents by using stripe‐patterned S/D electrodes. The operation frequency of the ring oscillator made of the TFTs with stripe S/D electrodes with 10 µm open space width is 2.5 times that made of the conventional a‐IGZO TFTs. This spreading current concept can be widely used for the design of oxide TFT array with low RC (resistance capacitance product) delay for high‐speed circuits.

The stability of organic TFTs (OTFTs) under bias stress and 85% humidity ambient are improved by polydimethylsiloxane passivation. The passivated OTFTs show a field-effect mobility (µ FE ) of ~1 cm 2 /V . s and on-to-off current ratio of ~10 7 . The high performance and excellent stability of the proposed OTFT, make it a promising candidate for future flexible/wearable electronics.

We report high‐performance organic TFTs with short channel length (L) of 6 µm. The OTFTs employ a bottom‐gate, bottom‐contact structure, with all layers patterned by conventional photolithographic methods. A field effect mobility of ∼0.45 cm2/V·s, and the on‐to‐off current ratio of ∼106 were obtained in the fabricated p‐channel OTFTs. The short channel OTFT with excellent performance is promising for flexible, high‐resolution displays.

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