P‐133: Improved Stability of Organic TFTs by Polydimethylsiloxane Passivation

Li, Xiuling; Jeon, Jaekwon; Choi, Jonghyun; He, Mingqian; Manley, Robert G.; Chang, Jung Min; Zhelev, Nikolay; Mehrotra, Karan; Jang, Jin

doi:10.1002/sdtp.12316

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…As in the case of stamp-induced doping, PDMS would effectively protect the thermal deposition-doped channel, guarding the doping media from air-induced degradation. [49][50][51] Furthermore, For the chemical analysis of the thermally deposited oxide, X-ray photoelectron spectroscopy (XPS) was conducted with 3 nm-thin MoO 3 -deposited MoTe 2 . According to XPS results of Figure 2e, Mo peaks for oxidation state clearly appear after the deposition, proving a successful deposition of ultrathin MoO 3 .…”

Section: Resultsmentioning

confidence: 99%

Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO₃ and LiF

et al. 2022

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To dope 2D semiconductor channels, charge‐transfer doping has generally been done by thermal deposition of inorganic or organic thin‐film layers on top of the 2D channel in bottom‐gate field‐effect transistors (FETs). The doping effects are reproducible in most cases. However, such thermal deposition will damage the surface of 2D channels due to the kinetic energy of depositing atoms, causing hysteresis or certain degradation. Here, a more desirable charge‐transfer doping process is suggested. A damage‐free charge‐transfer doping is conducted for 2D MoTe2 (or MoS2) channels using a polydimethylsiloxane stamp. MoO3 or LiF is initially deposited on the stamp as a doping medium. Hysteresis‐minimized transfer characteristics are achieved from stamp‐doped FETs, while other devices with direct thermal deposition‐doped channels show large hysteresis. The stamping method seems to induce a van der Waals‐like damage‐free interface between the channel and doping media. The stamp‐induced doping is also well applied for a MoTe2‐based complementary inverter because MoO3‐ and LiF‐doping by separate stamps effectively modifies two ambipolar MoTe2 channels to p‐ and n‐type, respectively.

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Section: Resultsmentioning

confidence: 99%

Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO₃ and LiF

et al. 2022

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Multilayer Integration for Organic Thin‐Film Transistors

Guo

Huang

Ouyang

et al. 2021

Digital Encyclopedia of Applied Physics

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The organic thin‐film transistor (OTFT) owns advantages of low processing temperature and excellent mechanical flexibility for creating truly flexible or stretchable electronics on arbitrate substrates. Beyond extensive research efforts in organic semiconductor (OSC) materials, stacking of the OSC and other layers for high performance OTFTs and circuit integration in a manufacturable way becomes vital. In this article, the advantages of OTFTs over inorganic counterparts are discussed in details. Then the suitable devices structures and multi‐layer material stacks for integration are introduced. The key processes for OSC deposition, device multi‐layer stacking, and especially OSC patterning are described. Finally, the circuit integration techniques, including not only the process for formation of via interconnection but also the circuit styles and integration architectures, are reviewed.

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P‐133: Improved Stability of Organic TFTs by Polydimethylsiloxane Passivation

Cited by 2 publications

References 16 publications

Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO₃ and LiF

Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO₃ and LiF

Multilayer Integration for Organic Thin‐Film Transistors

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P‐133: Improved Stability of Organic TFTs by Polydimethylsiloxane Passivation

Cited by 2 publications

References 16 publications

Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO3 and LiF

Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO3 and LiF

Multilayer Integration for Organic Thin‐Film Transistors

Contact Info

Product

Resources

About

Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO₃ and LiF

Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO₃ and LiF